DMT3009LFVW-7 - параметры транзистора MOSFET, его аналоги, datasheet

DMT3009LFVW-7 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

   Наименование прибора: DMT3009LFVW-7
   Маркировка: SH9
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 35.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 12 nC
   trⓘ - Время нарастания: 5.2 ns
   Cossⓘ - Выходная емкость: 352 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
   Тип корпуса: POWERDI3333-8

Аналог (замена) для DMT3009LFVW-7

DMT3009LFVW-7 Datasheet (PDF)

..1. Size:520K 1
dmt3009lfvw-7.pdf

DMT3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low RDS(ON) Ensures On State Losses Are Minimized ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25C Density End Products 11m @ VGS = 10V 50A Occupies Just 33% of The Board Area Occupied by

3.1. Size:520K diodes
dmt3009lfvw.pdf

6.1. Size:449K diodes
dmt3009ldt.pdf

DMT3009LDT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low Gate Threshold Voltage Device BVDSS RDS(ON) Max TC = +25 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) C (Note 10) Halogen and Antimony Free. Green Device (Note 3) 11.1m @ VGS = 10V 30A Q1 & Q2 30V 13.8m @ VGS = 4.5V 28A 22.0m @ VGS = 3.8V 22A

8.1. Size:337K 1
dmt3006lps-13.pdf

DMT3006LPS GreenN-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID max Excellent Qgd x RDS(ON) Product (FOM) BVDSS RDS(ON) max TC = +25C Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher 6m @ VGS = 10V 65A Density En

8.2. Size:410K 1
dmt3006lfv-7.pdf

DMT3006LFV 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features Low RDS(ON) Ensures On-State Losses are Minimized ID Max BVDSS RDS(ON) Max TC = +25 Small Form Factor Thermally Efficient Package Enables Higher C Density End Products 7m @ VGS = 10V 30V 60A Occupies just 33% of the Board Area Occupied by SO-8 Enabling

8.3. Size:461K diodes
dmt3002lps.pdf

DMT3002LPS Green30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (Type K) Product Summary Features Thermally Efficient Package Cooler Running Applications ID BVDSS RDS(ON) TC = +25C

8.4. Size:421K diodes
dmt3008lfdf.pdf

DMT3008LFDF 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm Profile Ideal for Low Profile Applications ID max V(BR)DSS RDS(ON) max PCB Footprint of 4mm2 TA = +25C Low Gate Threshold Voltage 10m @ VGS = 10V 12.0A 30V Low On-Resistance 16m @ VGS = 4.5V 10.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

8.5. Size:337K diodes
dmt3006lps.pdf