DMT6004LPS-13 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMT6004LPS-13

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 139 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17.7 nS

Cossⓘ - Capacitancia de salida: 1477 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0031 Ohm

Encapsulados: POWERDI5060-8

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DMT6004LPS-13 datasheet

 ..1. Size:378K  1
 dmt6004lps-13.pdf pdf_icon

DMT6004LPS-13

DMT6004LPS Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features ID MAX 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25 C and Robust End Application Low RDS(ON) Minimizes Power Losses 100A 3.1m @ VGS = 10V Low QG Minimizes Switching Losses 60V Lead-Free Finish; RoHS Comp

 4.1. Size:378K  diodes
 dmt6004lps.pdf pdf_icon

DMT6004LPS-13

DMT6004LPS Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features ID MAX 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25 C and Robust End Application Low RDS(ON) Minimizes Power Losses 100A 3.1m @ VGS = 10V Low QG Minimizes Switching Losses 60V Lead-Free Finish; RoHS Comp

 7.1. Size:287K  diodes
 dmt6004sct.pdf pdf_icon

DMT6004LPS-13

DMT6004SCT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application ID Low Input Capacitance BVDSS RDS(ON) max TC = +25 C Low Input/Output Leakage (Note 9) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 60V 3.65m @ VGS = 10V 100A Halogen and Antimony Fre

 7.2. Size:261K  inchange semiconductor
 dmt6004sct.pdf pdf_icon

DMT6004LPS-13

isc N-Channel MOSFET Transistor DMT6004SCT FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 3.65m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p

MOSTRAR MÁS

Otros transistores... DMP3017SFV-7, DMP4015SPS-13, DMT10H015LPS-13, DMT3006LFV-7, DMT3006LPS-13, DMT3009LFVW-7, DMT31M6LPS-13, DMT32M5LPS-13, 4435, DMT6005LPS-13, DMT6009LPS-13, DMT6016LPS-13, DMTH4007LPS-13, DMTH6002LPS-13, DMTH6010LPSQ-13, DMTH8003SPS-13, DMTH8012LPSW-13