STM4637 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STM4637
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.7 A
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 280 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de MOSFET STM4637
STM4637 Datasheet (PDF)
stm4637.pdf
STM4637aS mHop Microelectronics C orp.Ver 1.1P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.30 @ VGS=-10VSuface Mount Package.-30V -7.7A48 @ VGS=-4.5VESD Protected.D 5 4 GD 6 3S7 2D SS O-88 1D S1(TA=25C unless otherwise noted)A
stm4633.pdf
STM4633aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.33 @ VGS=-10VSuface Mount Package.-30V -7.0A52 @ VGS=-4.5VESD Protected.D 5 4 G6 3D S7 2D SS O-8D 8 1S1(TA=25C unless otherwise noted)AB
stm4639t.pdf
GreenProductSTM4639TaS mHop Microelectronics C orp.Ver 1.1P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.12.5 @ VGS=-10VSuface Mount Package.-30V -10A16.5 @ VGS=-4.5V ESD Protected.D 5 4 G6 3D S7 2D SSO-8D 8 1S1ABSOLUTE MAXIMUM R
stm4639.pdf
GreenProductSTM4639aS mHop Microelectronics C orp.Ver 2.1P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.8.5 @ VGS=-10VSuface Mount Package.-30V -14A13 @ VGS=-4.5VESD ProctecedD 5 4 G6 3D S7 2D SSO- 8D 8 1S1)ABSOLUTE MAXIMUM RA
stm4635.pdf
STM4635aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.33 @ VGS=-10VSuface Mount Package.-40V -7A50 @ VGS=-4.5VESD ProctecedD 5 4 G6 3D S7 2 SDS O-8D 8 1S1(TA=25C unless otherwise noted )ABS
Otros transistores... FDP025N06 , FDP030N06 , FDP032N08 , FDP036N10A , STM4639 , FDP038AN06A0 , FDP040N06 , FDP045N10AF102 , SPW47N60C3 , FDP047N08 , FDP047N10 , STM4635 , FDP050AN06A0 , FDP054N10 , STM4633 , FDP060AN08A0 , FDP075N15AF102 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918