STM4637 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STM4637
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.7 A
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 280 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
Encapsulados: SOP8
Búsqueda de reemplazo de STM4637 MOSFET
- Selecciónⓘ de transistores por parámetros
STM4637 datasheet
stm4637.pdf
STM4637 a S mHop Microelectronics C orp. Ver 1.1 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 30 @ VGS=-10V Suface Mount Package. -30V -7.7A 48 @ VGS=-4.5V ESD Protected. D 5 4 G D 6 3 S 7 2 D S S O-8 8 1 D S 1 (TA=25 C unless otherwise noted) A
stm4633.pdf
STM4633 a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 33 @ VGS=-10V Suface Mount Package. -30V -7.0A 52 @ VGS=-4.5V ESD Protected. D 5 4 G 6 3 D S 7 2 D S S O-8 D 8 1 S 1 (TA=25 C unless otherwise noted) AB
stm4639t.pdf
Green Product STM4639T a S mHop Microelectronics C orp. Ver 1.1 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 12.5 @ VGS=-10V Suface Mount Package. -30V -10A 16.5 @ VGS=-4.5V ESD Protected. D 5 4 G 6 3 D S 7 2 D S SO-8 D 8 1 S 1 ABSOLUTE MAXIMUM R
stm4639.pdf
Green Product STM4639 a S mHop Microelectronics C orp. Ver 2.1 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 8.5 @ VGS=-10V Suface Mount Package. -30V -14A 13 @ VGS=-4.5V ESD Procteced D 5 4 G 6 3 D S 7 2 D S SO- 8 D 8 1 S 1 ) ABSOLUTE MAXIMUM RA
Otros transistores... FDP025N06 , FDP030N06 , FDP032N08 , FDP036N10A , STM4639 , FDP038AN06A0 , FDP040N06 , FDP045N10AF102 , IRFZ46N , FDP047N08 , FDP047N10 , STM4635 , FDP050AN06A0 , FDP054N10 , STM4633 , FDP060AN08A0 , FDP075N15AF102 .
History: DMG6602S | FDPF680N10T | FQD12N20L | ISW65R041CFD | STM4532 | STK900
History: DMG6602S | FDPF680N10T | FQD12N20L | ISW65R041CFD | STM4532 | STK900
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10 | ASW80R290E | ASW65R120EFD | ASW65R110E | ASW65R095EFD | ASW65R046EFD | ASW65R041EFDA | ASW65R041E | ASW60R150E | ASW60R090EFDA
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