DMT6016LPS-13 Todos los transistores

 

DMT6016LPS-13 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMT6016LPS-13
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 32 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.2 nS
   Cossⓘ - Capacitancia de salida: 282 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: POWERDI5060-8
 

 Búsqueda de reemplazo de DMT6016LPS-13 MOSFET

   - Selección ⓘ de transistores por parámetros

 

DMT6016LPS-13 Datasheet (PDF)

 ..1. Size:639K  1
 dmt6016lps-13.pdf pdf_icon

DMT6016LPS-13

DMT6016LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package - Cooler Running Applications V(BR)DSS RDS(ON) TC = +25C High Conversion Efficiency 15m @ VGS = 10V 32 A Low RDS(ON) Minimizes On-State Losses 60V 24 A 24m @ VGS = 4.5V Low Input Capacitance Fast Switching Speed

 4.1. Size:602K  diodes
 dmt6016lps.pdf pdf_icon

DMT6016LPS-13

DMT6016LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package - Cooler Running Applications V(BR)DSS RDS(ON) TC = +25C High Conversion Efficiency 15m @ VGS = 10V 32 A Low RDS(ON) Minimizes On-State Losses 60V 24 A 24m @ VGS = 4.5V Low Input Capacitance Fast Switching Speed

 6.1. Size:296K  diodes
 dmt6016lss.pdf pdf_icon

DMT6016LPS-13

DMT6016LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C 18m @ VGS = 10V 9.2 A Fast Switching Speed 60V 7.5 A 28m @ VGS = 4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3

 6.2. Size:337K  diodes
 dmt6016lfdf.pdf pdf_icon

DMT6016LPS-13

DMT6016LFDF60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max 100% Unclamped Inductive Switch (UIS) test in production V(BR)DSS RDS(ON) max TA = +25C 0.6mm profile ideal for low profile applications 16m @ VGS = 10V 8.9A PCB footprint of 4mm2 60V 27m @ VGS = 4.5V 6.8A Low On-Resistance Totally Lead-Free & Ful

MOSTRAR MÁS

Otros transistores... DMT3006LFV-7 , DMT3006LPS-13 , DMT3009LFVW-7 , DMT31M6LPS-13 , DMT32M5LPS-13 , DMT6004LPS-13 , DMT6005LPS-13 , DMT6009LPS-13 , IRFB3607 , DMTH4007LPS-13 , DMTH6002LPS-13 , DMTH6010LPSQ-13 , DMTH8003SPS-13 , DMTH8012LPSW-13 , EMB06N03V , FDMS86380-F085 , G12P03D3 .

History: MTY30N50E | NCEP029N10 | IRF7700 | SFF9140-28 | HSM4805 | APT10050B2VFR | WMO053NV8HGS

 

 
Back to Top

 


 
.