DMT6016LPS-13 Specs and Replacement

Type Designator: DMT6016LPS-13

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.2 nS

Cossⓘ - Output Capacitance: 282 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: POWERDI5060-8

DMT6016LPS-13 substitution

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DMT6016LPS-13 datasheet

 ..1. Size:639K  1
 dmt6016lps-13.pdf pdf_icon

DMT6016LPS-13

DMT6016LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package - Cooler Running Applications V(BR)DSS RDS(ON) TC = +25 C High Conversion Efficiency 15m @ VGS = 10V 32 A Low RDS(ON) Minimizes On-State Losses 60V 24 A 24m @ VGS = 4.5V Low Input Capacitance Fast Switching Speed ... See More ⇒

 4.1. Size:602K  diodes
 dmt6016lps.pdf pdf_icon

DMT6016LPS-13

DMT6016LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package - Cooler Running Applications V(BR)DSS RDS(ON) TC = +25 C High Conversion Efficiency 15m @ VGS = 10V 32 A Low RDS(ON) Minimizes On-State Losses 60V 24 A 24m @ VGS = 4.5V Low Input Capacitance Fast Switching Speed ... See More ⇒

 6.1. Size:296K  diodes
 dmt6016lss.pdf pdf_icon

DMT6016LPS-13

DMT6016LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25 C 18m @ VGS = 10V 9.2 A Fast Switching Speed 60V 7.5 A 28m @ VGS = 4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3... See More ⇒

 6.2. Size:337K  diodes
 dmt6016lfdf.pdf pdf_icon

DMT6016LPS-13

DMT6016LFDF 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max 100% Unclamped Inductive Switch (UIS) test in production V(BR)DSS RDS(ON) max TA = +25 C 0.6mm profile ideal for low profile applications 16m @ VGS = 10V 8.9A PCB footprint of 4mm2 60V 27m @ VGS = 4.5V 6.8A Low On-Resistance Totally Lead-Free & Ful... See More ⇒

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Detailed specifications: DMT3006LFV-7, DMT3006LPS-13, DMT3009LFVW-7, DMT31M6LPS-13, DMT32M5LPS-13, DMT6004LPS-13, DMT6005LPS-13, DMT6009LPS-13, K4145, DMTH4007LPS-13, DMTH6002LPS-13, DMTH6010LPSQ-13, DMTH8003SPS-13, DMTH8012LPSW-13, EMB06N03V, FDMS86380-F085, G12P03D3

Keywords - DMT6016LPS-13 MOSFET specs

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