HSBA4204 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HSBA4204

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 36 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.4 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm

Encapsulados: PRPAK5X6

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HSBA4204 datasheet

 ..1. Size:315K  1
hsba4204.pdf pdf_icon

HSBA4204

HSBA4204 Dual N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBA4204 is the high cell density trenched N- V 40 V DS ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 11.5 m DS(ON),typ converter applications. The HSBA4204 meet the RoHS and Green Product I 30 A D requirement, 100% EAS guaranteed with full fu

 9.1. Size:438K  1
hsba4006.pdf pdf_icon

HSBA4204

HSBA4006 N-Ch 40V Fast Switching MOSFETs Description Product Summary VDS 40 V The HSBA4006 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 7.5 m gate charge for most of the synchronous buck converter applications. ID 60 A The HSBA4006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel

 9.2. Size:556K  1
hsba4016.pdf pdf_icon

HSBA4204

HSBA4016 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBA4016 is the high cell density trenched N- VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 6.5 m converter applications. ID 75 A The HSBA4016 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function relia

 9.3. Size:626K  1
hsba4909.pdf pdf_icon

HSBA4204

HSBA4909 N-Ch and P-Ch Fast Switching MOSFETs Description Product Summary The HSBA4909 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with 40V 8m 15A high cell density, which provide excellent -40V 13m -15A RDSON and gate charge for most of the synchronous buck converter applications. The HSBA4909 meet the RoHS and Green Product requiremen

Otros transistores... G16P03D3, GL150N03AD, GL35N03AD3, GT080N10D5, GT110N06D5, HGQ065NE4A, HSBA3016, HSBA4115, 4N60, HSBA4909, HSBA6074, HSBA6115, HSBA6214, HSBB3072, HSBB6113, HSBB6254, HY1906C2