HSBA4204 Todos los transistores

 

HSBA4204 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HSBA4204
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 36 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.4 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: PRPAK5X6
 

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HSBA4204 Datasheet (PDF)

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hsba4204.pdf pdf_icon

HSBA4204

HSBA4204 Dual N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBA4204 is the high cell density trenched N-V 40 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 11.5 m DS(ON),typconverter applications. The HSBA4204 meet the RoHS and Green Product I 30 A Drequirement, 100% EAS guaranteed with full fu

 9.1. Size:438K  1
hsba4006.pdf pdf_icon

HSBA4204

HSBA4006 N-Ch 40V Fast Switching MOSFETs Description Product Summary VDS 40 V The HSBA4006 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 7.5 m gate charge for most of the synchronous buck converter applications. ID 60 A The HSBA4006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel

 9.2. Size:556K  1
hsba4016.pdf pdf_icon

HSBA4204

HSBA4016 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBA4016 is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 6.5 m converter applications. ID 75 A The HSBA4016 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function relia

 9.3. Size:626K  1
hsba4909.pdf pdf_icon

HSBA4204

HSBA4909 N-Ch and P-Ch Fast Switching MOSFETs Description Product Summary The HSBA4909 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with 40V 8m 15A high cell density, which provide excellent -40V 13m -15A RDSON and gate charge for most of the synchronous buck converter applications. The HSBA4909 meet the RoHS and Green Product requiremen

Otros transistores... G16P03D3 , GL150N03AD , GL35N03AD3 , GT080N10D5 , GT110N06D5 , HGQ065NE4A , HSBA3016 , HSBA4115 , 10N65 , HSBA4909 , HSBA6074 , HSBA6115 , HSBA6214 , HSBB3072 , HSBB6113 , HSBB6254 , HY1906C2 .

History: SSM9916GJ | STI15NM60N | RU60E16R | MTDK3S6R | SJMN230R70ZF | IRFB17N60K | TMA12N65H

 

 
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