HSBA4204. Аналоги и основные параметры
Наименование производителя: HSBA4204
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 36 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 3.4 ns
Cossⓘ - Выходная емкость: 120 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm
Тип корпуса: PRPAK5X6
Аналог (замена) для HSBA4204
- подборⓘ MOSFET транзистора по параметрам
HSBA4204 даташит
..1. Size:315K 1
hsba4204.pdf 

HSBA4204 Dual N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBA4204 is the high cell density trenched N- V 40 V DS ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 11.5 m DS(ON),typ converter applications. The HSBA4204 meet the RoHS and Green Product I 30 A D requirement, 100% EAS guaranteed with full fu
9.1. Size:438K 1
hsba4006.pdf 

HSBA4006 N-Ch 40V Fast Switching MOSFETs Description Product Summary VDS 40 V The HSBA4006 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 7.5 m gate charge for most of the synchronous buck converter applications. ID 60 A The HSBA4006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel
9.2. Size:556K 1
hsba4016.pdf 

HSBA4016 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBA4016 is the high cell density trenched N- VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 6.5 m converter applications. ID 75 A The HSBA4016 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function relia
9.3. Size:626K 1
hsba4909.pdf 

HSBA4909 N-Ch and P-Ch Fast Switching MOSFETs Description Product Summary The HSBA4909 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with 40V 8m 15A high cell density, which provide excellent -40V 13m -15A RDSON and gate charge for most of the synchronous buck converter applications. The HSBA4909 meet the RoHS and Green Product requiremen
9.4. Size:690K 1
hsba4094.pdf 

HSBA4094 N-Ch 40V Fast Switching MOSFETs Product Summary General Description VDS 40 V 100% UIS Tested Advanced Trench Technology RDS(ON),typ 2.5 m Low Gate Charge High Current Capability ID 118 A RoHS and Halogen-Free Compliant 100% EAS Guaranteed Applications PRPAK5X6 Pin Configuration SMPS Synchronous Rectification DC/DC Conve
9.5. Size:771K 1
hsba4048.pdf 

HSBA4048 N-Ch 40V Fast Switching MOSFETs Product Summary General Description V 40 V DS 100% UIS Tested Advanced Trench Technology R 1.8 m DS(ON),max Low Gate Charge High Current Capability I 100 A D RoHS and Halogen-Free Compliant Applications PRPAK5X6 Pin Configuration SMPS Synchronous Rectification DC/DC Converters Or-ing
9.6. Size:467K 1
hsba4115.pdf 

HSBA4115 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBA4115 is the high cell density trenched V -40 V DS P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 10.5 m DS(ON),typ converter applications. I -52 A D The HSBA4115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full functi
9.7. Size:438K huashuo
hsba4006.pdf 

HSBA4006 N-Ch 40V Fast Switching MOSFETs Description Product Summary VDS 40 V The HSBA4006 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 7.5 m gate charge for most of the synchronous buck converter applications. ID 60 A The HSBA4006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel
9.8. Size:556K huashuo
hsba4016.pdf 

HSBA4016 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBA4016 is the high cell density trenched N- VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 6.5 m converter applications. ID 75 A The HSBA4016 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function relia
9.9. Size:690K huashuo
hsba4094.pdf 

HSBA4094 N-Ch 40V Fast Switching MOSFETs Product Summary General Description VDS 40 V 100% UIS Tested Advanced Trench Technology RDS(ON),typ 2.5 m Low Gate Charge High Current Capability ID 118 A RoHS and Halogen-Free Compliant 100% EAS Guaranteed Applications PRPAK5X6 Pin Configuration SMPS Synchronous Rectification DC/DC Conve
9.10. Size:771K huashuo
hsba4048.pdf 

HSBA4048 N-Ch 40V Fast Switching MOSFETs Product Summary General Description V 40 V DS 100% UIS Tested Advanced Trench Technology R 1.8 m DS(ON),max Low Gate Charge High Current Capability I 100 A D RoHS and Halogen-Free Compliant Applications PRPAK5X6 Pin Configuration SMPS Synchronous Rectification DC/DC Converters Or-ing
9.11. Size:623K huashuo
hsba4052.pdf 

HSBA4052 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBA4052 is the high cell density trenched N- VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 6.9 m converter applications. ID 50 A The HSBA4052 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel
Другие IGBT... G16P03D3, GL150N03AD, GL35N03AD3, GT080N10D5, GT110N06D5, HGQ065NE4A, HSBA3016, HSBA4115, 4N60, HSBA4909, HSBA6074, HSBA6115, HSBA6214, HSBB3072, HSBB6113, HSBB6254, HY1906C2