HYG017N04LS1C2 Todos los transistores

 

HYG017N04LS1C2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HYG017N04LS1C2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 135 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 41 nS
   Cossⓘ - Capacitancia de salida: 813 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0021 Ohm
   Paquete / Cubierta: PDFN5X6-8L
 

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HYG017N04LS1C2 Datasheet (PDF)

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HYG017N04LS1C2

HYG017N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/135A D D D D D D D D RDS(ON)= 1.7m (typ.) @VGS = 10V RDS(ON)= 2.3m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme

 9.1. Size:638K  1
 hyg015n04ls1c2.pdf pdf_icon

HYG017N04LS1C2

HYG015N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/150A D D D D D D D D RDS(ON)= 1.4m (typ.) @VGS = 10V RDS(ON)= 2.0m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme

 9.2. Size:706K  1
 hyg013n03ls1c2.pdf pdf_icon

HYG017N04LS1C2

HYG013N03LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/150A D D D D D D D D RDS(ON)= 1.3m (typ.) @VGS = 10V RDS(ON)= 2.0m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme

 9.3. Size:1326K  1
 hyg019n04nr1c2.pdf pdf_icon

HYG017N04LS1C2

HYG019N04NR1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 40V/127AD D D DD D D DRDS(ON)= 2.0 m(typ.) @VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Battery ProtectionSingle N-Channel MOSFETOrdering and Marking InformationPackage Code

MOSTRAR MÁS

Otros transistores... HSBB6113 , HSBB6254 , HY1906C2 , HYG007N03LS1C2 , HYG009N04LS1C2 , HYG011N04LS1C2 , HYG013N03LS1C2 , HYG015N04LS1C2 , AON6380 , HYG019N04NR1C2 , HYG023N03LR1C2 , HYG025N04NA1C2 , HYG045N03LA1C1 , HYG055N08NS1C2 , HYG072N10LS1C2 , HYG110P04LQ2C2 , IPLK60R1K0PFD7 .

History: PSMN1R6-30BL | IPD90N04S4-03 | HCFL65R130 | WML20N50D1 | D1096 | IRLMS1902PBF | HM100N03D

 

 
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