HYG023N03LR1C2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HYG023N03LR1C2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 62.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 125 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 64 nS

Cossⓘ - Capacitancia de salida: 561 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm

Encapsulados: PPAK5X6-8L

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HYG023N03LR1C2 datasheet

 ..1. Size:793K  1
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HYG023N03LR1C2

HYG023N03LR1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/125A D D D D D D D D RDS(ON)= 1.5m (typ.) @VGS = 10V RDS(ON)= 2.1m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PPAK5*6-8L Applications Switching Application Power Management for DC/

 2.1. Size:1225K  hymexa
hyg023n03lr1d hyg023n03lr1u hyg023n03lr1v.pdf pdf_icon

HYG023N03LR1C2

HYG023N03LR1D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 30V/110A RDS(ON)= 2.1m (typ.)@VGS = 10V RDS(ON)= 2.7m (typ.)@VGS = 4.5V S D S G D 100% Avalanche Tested G Reliable and Rugged S D G Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Switching Application Power Mana

 9.1. Size:1497K  1
hyg025n06ls1c2.pdf pdf_icon

HYG023N03LR1C2

HYG025N06LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description D D D D D D D D 60V/170A RDS(ON)= 2.1 m (typ.) @ VGS = 10V RDS(ON)= 3.2 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S S (RoHS Compliant) Pin1 PDFN8L 5x6 Applications High Frequency Point-of-Load Synchronous B

 9.2. Size:1254K  1
hyg025n04na1c2.pdf pdf_icon

HYG023N03LR1C2

HYG025N04NA1C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description 40V/190A RDS(ON)= 1.4m (typ.) @VGS = 10V D D D D D D D D 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G PDFN8L(5x6) Applications Load Switch Lithium battery protect board Single N-Channel MOSFET Ordering and Marking Information Pac

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