IPLK60R1K0PFD7 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPLK60R1K0PFD7

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 6 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm

Encapsulados: THINPAK5X6

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IPLK60R1K0PFD7 datasheet

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IPLK60R1K0PFD7

IPLK60R1K0PFD7 MOSFET ThinPAK 5x6 600V CoolMOS PFD7 SJ Power Device 8 7 CoolMOS is a revolutionary technology for high voltage power 6 5 MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, ada

 5.1. Size:1371K  1
 iplk60r1k5pfd7.pdf pdf_icon

IPLK60R1K0PFD7

IPLK60R1K5PFD7 MOSFET ThinPAK 5x6 600V CoolMOS PFD7 SJ Power Device 8 7 CoolMOS is a revolutionary technology for high voltage power 6 5 MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, ada

 7.1. Size:1378K  1
 iplk60r360pfd7.pdf pdf_icon

IPLK60R1K0PFD7

IPLK60R360PFD7 MOSFET ThinPAK 5x6 600V CoolMOS PFD7 SJ Power Device 8 7 CoolMOS is a revolutionary technology for high voltage power 6 5 MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, ada

 7.2. Size:1373K  1
 iplk60r600pfd7.pdf pdf_icon

IPLK60R1K0PFD7

IPLK60R600PFD7 MOSFET ThinPAK 5x6 600V CoolMOS PFD7 SJ Power Device 8 7 CoolMOS is a revolutionary technology for high voltage power 6 5 MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, ada

MOSTRAR MÁS

Otros transistores... HYG017N04LS1C2, HYG019N04NR1C2, HYG023N03LR1C2, HYG025N04NA1C2, HYG045N03LA1C1, HYG055N08NS1C2, HYG072N10LS1C2, HYG110P04LQ2C2, IRF1405, IPLK60R1K5PFD7, IPLK60R360PFD7, IPLK60R600PFD7, IRFH3707TRPBF, IRFH5006TRPBF, IRFH5010TRPBF, IRFH5020TRPBF, IRFH5300TRPBF