IPLK60R1K0PFD7 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPLK60R1K0PFD7
Маркировка: 60R1K0D7
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 31.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5.2 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 6 nC
trⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 6 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm
Тип корпуса: THINPAK5X6
Аналог (замена) для IPLK60R1K0PFD7
IPLK60R1K0PFD7 Datasheet (PDF)
iplk60r1k0pfd7.pdf
IPLK60R1K0PFD7MOSFETThinPAK 5x6600V CoolMOS PFD7 SJ Power Device87CoolMOS is a revolutionary technology for high voltage power65MOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, ada
iplk60r1k5pfd7.pdf
IPLK60R1K5PFD7MOSFETThinPAK 5x6600V CoolMOS PFD7 SJ Power Device87CoolMOS is a revolutionary technology for high voltage power65MOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, ada
iplk60r360pfd7.pdf
IPLK60R360PFD7MOSFETThinPAK 5x6600V CoolMOS PFD7 SJ Power Device87CoolMOS is a revolutionary technology for high voltage power65MOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, ada
iplk60r600pfd7.pdf
IPLK60R600PFD7MOSFETThinPAK 5x6600V CoolMOS PFD7 SJ Power Device87CoolMOS is a revolutionary technology for high voltage power65MOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, ada
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918