IPLK60R1K0PFD7. Аналоги и основные параметры

Наименование производителя: IPLK60R1K0PFD7

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 31.3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.2 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 9 ns

Cossⓘ - Выходная емкость: 6 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm

Тип корпуса: THINPAK5X6

Аналог (замена) для IPLK60R1K0PFD7

- подборⓘ MOSFET транзистора по параметрам

 

IPLK60R1K0PFD7 даташит

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IPLK60R1K0PFD7

IPLK60R1K0PFD7 MOSFET ThinPAK 5x6 600V CoolMOS PFD7 SJ Power Device 8 7 CoolMOS is a revolutionary technology for high voltage power 6 5 MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, ada

 5.1. Size:1371K  1
 iplk60r1k5pfd7.pdf pdf_icon

IPLK60R1K0PFD7

IPLK60R1K5PFD7 MOSFET ThinPAK 5x6 600V CoolMOS PFD7 SJ Power Device 8 7 CoolMOS is a revolutionary technology for high voltage power 6 5 MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, ada

 7.1. Size:1378K  1
 iplk60r360pfd7.pdf pdf_icon

IPLK60R1K0PFD7

IPLK60R360PFD7 MOSFET ThinPAK 5x6 600V CoolMOS PFD7 SJ Power Device 8 7 CoolMOS is a revolutionary technology for high voltage power 6 5 MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, ada

 7.2. Size:1373K  1
 iplk60r600pfd7.pdf pdf_icon

IPLK60R1K0PFD7

IPLK60R600PFD7 MOSFET ThinPAK 5x6 600V CoolMOS PFD7 SJ Power Device 8 7 CoolMOS is a revolutionary technology for high voltage power 6 5 MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, ada

ПОКАЗАТЬ ЕЩЁ

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