IPLK60R600PFD7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPLK60R600PFD7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 8 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: THINPAK5X6

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IPLK60R600PFD7 Datasheet (PDF)

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iplk60r600pfd7.pdf

IPLK60R600PFD7MOSFETThinPAK 5x6600V CoolMOS PFD7 SJ Power Device87CoolMOS is a revolutionary technology for high voltage power65MOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, ada

7.1. Size:1373K 1
iplk60r1k0pfd7.pdf

IPLK60R1K0PFD7MOSFETThinPAK 5x6600V CoolMOS PFD7 SJ Power Device87CoolMOS is a revolutionary technology for high voltage power65MOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, ada

7.2. Size:1378K 1
iplk60r360pfd7.pdf

IPLK60R360PFD7MOSFETThinPAK 5x6600V CoolMOS PFD7 SJ Power Device87CoolMOS is a revolutionary technology for high voltage power65MOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, ada

7.3. Size:1371K 1
iplk60r1k5pfd7.pdf

IPLK60R1K5PFD7MOSFETThinPAK 5x6600V CoolMOS PFD7 SJ Power Device87CoolMOS is a revolutionary technology for high voltage power65MOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, ada

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