Справочник MOSFET. IPLK60R600PFD7

 

IPLK60R600PFD7 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPLK60R600PFD7
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 8 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
   Тип корпуса: THINPAK5X6
     - подбор MOSFET транзистора по параметрам

 

IPLK60R600PFD7 Datasheet (PDF)

 ..1. Size:1373K  1
 iplk60r600pfd7.pdf pdf_icon

IPLK60R600PFD7

IPLK60R600PFD7MOSFETThinPAK 5x6600V CoolMOS PFD7 SJ Power Device87CoolMOS is a revolutionary technology for high voltage power65MOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, ada

 7.1. Size:1373K  1
 iplk60r1k0pfd7.pdf pdf_icon

IPLK60R600PFD7

IPLK60R1K0PFD7MOSFETThinPAK 5x6600V CoolMOS PFD7 SJ Power Device87CoolMOS is a revolutionary technology for high voltage power65MOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, ada

 7.2. Size:1378K  1
 iplk60r360pfd7.pdf pdf_icon

IPLK60R600PFD7

IPLK60R360PFD7MOSFETThinPAK 5x6600V CoolMOS PFD7 SJ Power Device87CoolMOS is a revolutionary technology for high voltage power65MOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, ada

 7.3. Size:1371K  1
 iplk60r1k5pfd7.pdf pdf_icon

IPLK60R600PFD7

IPLK60R1K5PFD7MOSFETThinPAK 5x6600V CoolMOS PFD7 SJ Power Device87CoolMOS is a revolutionary technology for high voltage power65MOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, ada

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