IRFH8318TRPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFH8318TRPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 59 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 120 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.35 V
Carga de la puerta (Qg): 41 nC
Tiempo de subida (tr): 33 nS
Conductancia de drenaje-sustrato (Cd): 700 pF
Resistencia entre drenaje y fuente RDS(on): 0.0031 Ohm
Paquete / Cubierta: PQFN5X6
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IRFH8318TRPBF Datasheet (PDF)
irfh8318trpbf.pdf
IRFH8318PbFHEXFET Power MOSFETVDS 30 VVgs max 20 VRDS(on) max 3.1(@VGS = 10V)m(@VGS = 4.5V)4.6Qg typ19 nCPQFN 5X6 mmID 50 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (
irfh8318pbf.pdf
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irfh8318pbf.pdf
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irfh8311.pdf
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irfh8316.pdf
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irfh8311pbf.pdf
IRFH8311PbFHEXFET Power MOSFETVDS 30 VVgs max V 20RDS(on) max 2.1(@VGS = 10V) m(@VGS = 4.5V) 3.2Qg typ. 30 nCPQFN 5X6 mmID 80 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (
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