IRFH8318TRPBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFH8318TRPBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 59
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.35
V
|Id|ⓘ - Maximum Drain Current: 120
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 41
nC
trⓘ - Rise Time: 33
nS
Cossⓘ -
Output Capacitance: 700
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0031
Ohm
Package:
PQFN5X6
IRFH8318TRPBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFH8318TRPBF
Datasheet (PDF)
..1. Size:239K 1
irfh8318trpbf.pdf 
IRFH8318PbFHEXFET Power MOSFETVDS 30 VVgs max 20 VRDS(on) max 3.1(@VGS = 10V)m(@VGS = 4.5V)4.6Qg typ19 nCPQFN 5X6 mmID 50 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (
6.1. Size:247K international rectifier
irfh8318pbf.pdf
PD - 97649CIRFH8318PbFHEXFET Power MOSFETVDS 30 VVgs max 20 VRDS(on) max 3.1(@VGS = 10V)m(@VGS = 4.5V)4.6Qg typ19 nCPQFN 5X6 mmID 50 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (
6.2. Size:239K infineon
irfh8318pbf.pdf
IRFH8318PbFHEXFET Power MOSFETVDS 30 VVgs max 20 VRDS(on) max 3.1(@VGS = 10V)m(@VGS = 4.5V)4.6Qg typ19 nCPQFN 5X6 mmID 50 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (
7.1. Size:259K 1
irfh8311trpbf.pdf
IRFH8311PbFHEXFET Power MOSFETVDS 30 VVgs max V 20RDS(on) max 2.1(@VGS = 10V) m(@VGS = 4.5V) 3.2Qg typ. 30 nCPQFN 5X6 mmID 80 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (
7.2. Size:310K international rectifier
irfh8311.pdf
IRFH8311PbFHEXFET Power MOSFETVDS 30 VVgs max V 20RDS(on) max 2.1(@VGS = 10V) m(@VGS = 4.5V) 3.2Qg typ. 30 nCPQFN 5X6 mmID 80 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (
7.3. Size:248K international rectifier
irfh8316.pdf
IRFH8316PbFHEXFET Power MOSFETVDS 30 VVgs max 20 VRDS(on) max 2.95(@VGS = 10V)m(@VGS = 4.5V)4.30Qg typ30.0 nCPQFN 5X6 mmID 50 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (
7.4. Size:259K infineon
irfh8311pbf.pdf
IRFH8311PbFHEXFET Power MOSFETVDS 30 VVgs max V 20RDS(on) max 2.1(@VGS = 10V) m(@VGS = 4.5V) 3.2Qg typ. 30 nCPQFN 5X6 mmID 80 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (
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