JMTQ35N06A Todos los transistores

 ..1. Size:627K  1
 jmtq35n06a.pdf

JMTQ35N06A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V,35A Load Switch R

 ..2. Size:1288K  jiejie micro
 jmtq35n06a.pdf

 9.1. Size:628K  jiejie micro
 jmtq3010d.pdf

JMTQ3010D Description JMT Dual N-channel Enhancement Mode Power MOSFET Features Applications 30V, 22A Load Switch RDS(ON)

 9.2. Size:1237K  jiejie micro
 jmtq3005c.pdf

30V, 61A, 5.4m N-channel Power Trench MOSFET JMTQ3005C Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 30 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 61 A Pb-free plating RDS(ON)_Typ(@VGS=10V 3.3 mW RDS(ON)_Typ(@VGS=4.5V 5.4 mW Applications Load Switch PW

 9.3. Size:1240K  jiejie micro
 jmtq3008a.pdf

30V, 41A, 8.8m N-channel Power Trench MOSFET JMTQ3008A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 30 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 41 A Pb-free plating RDS(ON)_Typ(@VGS=10V 6.1 mW RDS(ON)_Typ(@VGS=4.5V 8.8 mW Applications Load Switch PW

 9.4. Size:1238K  jiejie micro
 jmtq320n10a.pdf

100V, 23A, 24.4m N-channel Power Trench MOSFET JMTQ320N10A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 23 A RDS(ON)_Typ(@VGS=10V 22.5 mW Pb-free plating RDS(ON)_Typ(@VGS=4.5V 24.4 mW Applications Load Switch

 9.5. Size:1120K  jiejie micro
 jmtq3005a.pdf

JMTQ3005A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications l 30V, 50A l Load Switch RDS(ON)

 9.6. Size:1313K  jiejie micro
 jmtq3006c.pdf

30V, 52A, 6.1m N-channel Power Trench MOSFET JMTQ3006C Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 30 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 52 A Pb-free plating RDS(ON)_Typ(@VGS=10V 4.3 mW RDS(ON)_Typ(@VGS=4.5V 6.1 mW Applications Load Switch PW

 9.7. Size:518K  jiejie micro
 jmtq380c03d.pdf

JMTQ380C03D Description JMT N And P-Channel Enhancement Mode MOSFET Features Application N-Channel 30V, 6A Battery Protection R

 9.8. Size:792K  jiejie micro
 jmtq3003a.pdf

JMTQ3003A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 80A Load Switch RDS(ON)

 9.9. Size:1240K  jiejie micro
 jmtq3400d.pdf

30V, 40A, 11.3m N-channel Power Trench MOSFET JMTQ3400D Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 30 V 100% Vds Tested VGS(th)_Typ 1.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 40 A Pb-free plating RDS(ON)_Typ(@VGS=10V 10.6 mW RDS(ON)_Typ(@VGS=4.5V 11.3 mW Applications Load Switch

 9.10. Size:485K  jiejie micro
 jmtq3006b.pdf

JMTQ3006B Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 40A Load Switch RDS(ON)