FDP075N15AF102 Todos los transistores

 

FDP075N15AF102 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDP075N15AF102

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 333 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 92 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de FDP075N15AF102 MOSFET

- Selecciónⓘ de transistores por parámetros

 

FDP075N15AF102 datasheet

 4.1. Size:698K  fairchild semi
 fdp075n15a.pdf pdf_icon

FDP075N15AF102

December 2013 FDP075N15A / FDB075N15A N-Channel PowerTrench MOSFET 150 V, 130 A, 7.5 m Features Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Fast Switching lored to minimize the on-state resistance while maintaining Low Gate Charge s

 4.2. Size:312K  fairchild semi
 fdp075n15a f102 fdb075n15a.pdf pdf_icon

FDP075N15AF102

October 2012 FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench MOSFET 150V, 130A, 7.5m Features Description RDS(on) = 6.25m ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Fast Switching been especially tailored to minimize the on-state resistance and yet maintain superior switc

 4.3. Size:698K  fairchild semi
 fdp075n15a fdb075n15a.pdf pdf_icon

FDP075N15AF102

December 2013 FDP075N15A / FDB075N15A N-Channel PowerTrench MOSFET 150 V, 130 A, 7.5 m Features Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Fast Switching lored to minimize the on-state resistance while maintaining Low Gate Charge s

 4.4. Size:821K  onsemi
 fdp075n15a fdb075n15a.pdf pdf_icon

FDP075N15AF102

March 2015 FDP075N15A / FDB075N15A N-Channel PowerTrench MOSFET 150 V, 130 A, 7.5 m Features Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Fast Switching lored to minimize the on-state resistance while maintaining Low Gate Charge

MOSTRAR MÁS

Otros transistores... STM4637 , FDP047N08 , FDP047N10 , STM4635 , FDP050AN06A0 , FDP054N10 , STM4633 , FDP060AN08A0 , RU7088R , FDP083N15AF102 , FDP085N10AF102 , STM4615 , FDP090N10 , STM4605 , FDP100N10 , STM4550 , FDP10N60NZ .

History: FDPF5N50T

 

 

 


History: FDPF5N50T

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10 | ASW80R290E | ASW65R120EFD | ASW65R110E | ASW65R095EFD | ASW65R046EFD | ASW65R041EFDA | ASW65R041E | ASW60R150E | ASW60R090EFDA

 

 

 

Popular searches

2sc1904 | 2sc281 | m28s transistor | 2n3640 | tta1943 transistor | fb4410z | 2sa899 | 2sc1166

 

 

↑ Back to Top
.