All MOSFET. FDP075N15AF102 Datasheet

 

FDP075N15AF102 Datasheet and Replacement


   Type Designator: FDP075N15AF102
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 92 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO220
 

 FDP075N15AF102 substitution

   - MOSFET ⓘ Cross-Reference Search

 

FDP075N15AF102 Datasheet (PDF)

 4.1. Size:698K  fairchild semi
 fdp075n15a.pdf pdf_icon

FDP075N15AF102

December 2013FDP075N15A / FDB075N15AN-Channel PowerTrench MOSFET150 V, 130 A, 7.5 mFeatures Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Fast Switchinglored to minimize the on-state resistance while maintaining Low Gate Charges

 4.2. Size:312K  fairchild semi
 fdp075n15a f102 fdb075n15a.pdf pdf_icon

FDP075N15AF102

October 2012FDP075N15A_F102 / FDB075N15AN-Channel PowerTrench MOSFET 150V, 130A, 7.5mFeatures Description RDS(on) = 6.25m ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Fast Switching been especially tailored to minimize the on-state resistance and yet maintain superior switc

 4.3. Size:698K  fairchild semi
 fdp075n15a fdb075n15a.pdf pdf_icon

FDP075N15AF102

December 2013FDP075N15A / FDB075N15AN-Channel PowerTrench MOSFET150 V, 130 A, 7.5 mFeatures Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Fast Switchinglored to minimize the on-state resistance while maintaining Low Gate Charges

 4.4. Size:821K  onsemi
 fdp075n15a fdb075n15a.pdf pdf_icon

FDP075N15AF102

March 2015FDP075N15A / FDB075N15AN-Channel PowerTrench MOSFET150 V, 130 A, 7.5 mFeatures Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Fast Switchinglored to minimize the on-state resistance while maintaining Low Gate Charge

SHOW MORE

Datasheet: STM4637 , FDP047N08 , FDP047N10 , STM4635 , FDP050AN06A0 , FDP054N10 , STM4633 , FDP060AN08A0 , AON7403 , FDP083N15AF102 , FDP085N10AF102 , STM4615 , FDP090N10 , STM4605 , FDP100N10 , STM4550 , FDP10N60NZ .

History: PTP20N40B | STF23N80K5 | SRT10N120LD1 | F5V90HVX2 | AP09N70R-H | OSG65R650P | AOD607

Keywords - FDP075N15AF102 MOSFET datasheet

 FDP075N15AF102 cross reference
 FDP075N15AF102 equivalent finder
 FDP075N15AF102 lookup
 FDP075N15AF102 substitution
 FDP075N15AF102 replacement

 

 
Back to Top

 


 
.