All MOSFET. FDP075N15AF102 Datasheet

 

FDP075N15AF102 Datasheet and Replacement


   Type Designator: FDP075N15AF102
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 92 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 77 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO220
 

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FDP075N15AF102 Datasheet (PDF)

 4.1. Size:698K  fairchild semi
 fdp075n15a.pdf pdf_icon

FDP075N15AF102

December 2013FDP075N15A / FDB075N15AN-Channel PowerTrench MOSFET150 V, 130 A, 7.5 mFeatures Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Fast Switchinglored to minimize the on-state resistance while maintaining Low Gate Charges

 4.2. Size:312K  fairchild semi
 fdp075n15a f102 fdb075n15a.pdf pdf_icon

FDP075N15AF102

October 2012FDP075N15A_F102 / FDB075N15AN-Channel PowerTrench MOSFET 150V, 130A, 7.5mFeatures Description RDS(on) = 6.25m ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Fast Switching been especially tailored to minimize the on-state resistance and yet maintain superior switc

 4.3. Size:698K  fairchild semi
 fdp075n15a fdb075n15a.pdf pdf_icon

FDP075N15AF102

December 2013FDP075N15A / FDB075N15AN-Channel PowerTrench MOSFET150 V, 130 A, 7.5 mFeatures Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Fast Switchinglored to minimize the on-state resistance while maintaining Low Gate Charges

 4.4. Size:821K  onsemi
 fdp075n15a fdb075n15a.pdf pdf_icon

FDP075N15AF102

March 2015FDP075N15A / FDB075N15AN-Channel PowerTrench MOSFET150 V, 130 A, 7.5 mFeatures Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Fast Switchinglored to minimize the on-state resistance while maintaining Low Gate Charge

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