FDP075N15AF102 Datasheet. Specs and Replacement

Type Designator: FDP075N15AF102  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 333 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 92 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO220

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FDP075N15AF102 substitution

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FDP075N15AF102 datasheet

 4.1. Size:698K  fairchild semi
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FDP075N15AF102

December 2013 FDP075N15A / FDB075N15A N-Channel PowerTrench MOSFET 150 V, 130 A, 7.5 m Features Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Fast Switching lored to minimize the on-state resistance while maintaining Low Gate Charge s... See More ⇒

 4.2. Size:312K  fairchild semi
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FDP075N15AF102

October 2012 FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench MOSFET 150V, 130A, 7.5m Features Description RDS(on) = 6.25m ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Fast Switching been especially tailored to minimize the on-state resistance and yet maintain superior switc... See More ⇒

 4.3. Size:698K  fairchild semi
 fdp075n15a fdb075n15a.pdf pdf_icon

FDP075N15AF102

December 2013 FDP075N15A / FDB075N15A N-Channel PowerTrench MOSFET 150 V, 130 A, 7.5 m Features Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Fast Switching lored to minimize the on-state resistance while maintaining Low Gate Charge s... See More ⇒

 4.4. Size:821K  onsemi
 fdp075n15a fdb075n15a.pdf pdf_icon

FDP075N15AF102

March 2015 FDP075N15A / FDB075N15A N-Channel PowerTrench MOSFET 150 V, 130 A, 7.5 m Features Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Fast Switching lored to minimize the on-state resistance while maintaining Low Gate Charge... See More ⇒

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Detailed specifications: STM4637, FDP047N08, FDP047N10, STM4635, FDP050AN06A0, FDP054N10, STM4633, FDP060AN08A0, 3401, FDP083N15AF102, FDP085N10AF102, STM4615, FDP090N10, STM4605, FDP100N10, STM4550, FDP10N60NZ

Keywords - FDP075N15AF102 MOSFET specs

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