ME7114S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ME7114S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 52 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 71 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 37 nC
Tiempo de subida (tr): 16 nS
Conductancia de drenaje-sustrato (Cd): 260 pF
Resistencia entre drenaje y fuente RDS(on): 0.007 Ohm
Paquete / Cubierta: DFN3X3
Búsqueda de reemplazo de MOSFET ME7114S
ME7114S Datasheet (PDF)
me7114s.pdf
ME7114S-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7114S-G is the N-Channel logic enhancement mode power RDS(ON)7m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)10.5m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely l
me7114s-g.pdf
ME7114S-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7114S-G is the N-Channel logic enhancement mode power RDS(ON)7m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)10.5m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely l
me7114s-g.pdf
ME7114S-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7114S-G is the N-Channel logic enhancement mode power RDS(ON)7m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)10.5m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely l
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