ME7114S Todos los transistores

 

ME7114S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ME7114S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 52 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 71 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 260 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: DFN3X3

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ME7114S datasheet

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ME7114S

ME7114S-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7114S-G is the N-Channel logic enhancement mode power RDS(ON) 7m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 10.5m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely l

 0.1. Size:1491K  1
 me7114s-g.pdf pdf_icon

ME7114S

ME7114S-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7114S-G is the N-Channel logic enhancement mode power RDS(ON) 7m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 10.5m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely l

 0.2. Size:1423K  matsuki electric
 me7114s-g.pdf pdf_icon

ME7114S

ME7114S-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7114S-G is the N-Channel logic enhancement mode power RDS(ON) 7m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 10.5m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely l

Otros transistores... MCAC40N10YA-TP , MCAC50N06Y-TP , MCAC50N10Y-TP , MCAC60N08Y-TP , MCAC75N02-TP , MCAC80N045Y-TP , MCG10P03-TP , MCG30N03-TP , SPP20N60C3 , ME7170 , MEE7816S , MSJAC11N65Y-TP , MSK100N03DF , MSK20P80GNF , MSK30N03DF , MSK30P02DF , MSK3419DF .

History: SDU07N65 | APM4552K

 

 

 


History: SDU07N65 | APM4552K

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