ME7114S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ME7114S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 52 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 71 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 260 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
Paquete / Cubierta: DFN3X3
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ME7114S Datasheet (PDF)
me7114s.pdf
ME7114S-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7114S-G is the N-Channel logic enhancement mode power RDS(ON)7m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)10.5m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely l
me7114s-g.pdf
ME7114S-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7114S-G is the N-Channel logic enhancement mode power RDS(ON)7m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)10.5m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely l
me7114s-g.pdf
ME7114S-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7114S-G is the N-Channel logic enhancement mode power RDS(ON)7m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)10.5m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely l
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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Recientemente añadidas las descripciónes de los transistores:
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