ME7114S - Даташиты. Аналоги. Основные параметры
Наименование производителя: ME7114S
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 52 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 71 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 16 ns
Cossⓘ - Выходная емкость: 260 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
Тип корпуса: DFN3X3
Аналог (замена) для ME7114S
ME7114S Datasheet (PDF)
me7114s.pdf

ME7114S-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7114S-G is the N-Channel logic enhancement mode power RDS(ON)7m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)10.5m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely l
me7114s-g.pdf

ME7114S-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7114S-G is the N-Channel logic enhancement mode power RDS(ON)7m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)10.5m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely l
me7114s-g.pdf

ME7114S-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7114S-G is the N-Channel logic enhancement mode power RDS(ON)7m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)10.5m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely l
Другие MOSFET... MCAC40N10YA-TP , MCAC50N06Y-TP , MCAC50N10Y-TP , MCAC60N08Y-TP , MCAC75N02-TP , MCAC80N045Y-TP , MCG10P03-TP , MCG30N03-TP , IRF9540N , ME7170 , MEE7816S , MSJAC11N65Y-TP , MSK100N03DF , MSK20P80GNF , MSK30N03DF , MSK30P02DF , MSK3419DF .
History: BSZ050N03LS | 12N18 | 2SK4059MFV | 2SK2769-01MR | SL05N06Z | HUFA75639S3S | AP8N010LM
History: BSZ050N03LS | 12N18 | 2SK4059MFV | 2SK2769-01MR | SL05N06Z | HUFA75639S3S | AP8N010LM



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