NTMFD5875NLT1G Todos los transistores

 

NTMFD5875NLT1G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFD5875NLT1G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 32 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 22 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15.8 nS

Cossⓘ - Capacitancia de salida: 55 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm

Encapsulados: DFN8-5X6

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NTMFD5875NLT1G datasheet

 ..1. Size:132K  1
ntmfd5875nlt1g.pdf pdf_icon

NTMFD5875NLT1G

MOSFET Power, Dual N-Channel, Logic Level, Dual SO8FL 60 V, 33 mW, 22 A NTMFD5875NL www.onsemi.com Features Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses 33 mW @ 10 V These Devices are Pb-Free, Halogen Free and are RoHS Compliant 60 V 22 A 45 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise no

 3.1. Size:132K  onsemi
ntmfd5875nl.pdf pdf_icon

NTMFD5875NLT1G

MOSFET Power, Dual N-Channel, Logic Level, Dual SO8FL 60 V, 33 mW, 22 A NTMFD5875NL www.onsemi.com Features Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses 33 mW @ 10 V These Devices are Pb-Free, Halogen Free and are RoHS Compliant 60 V 22 A 45 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise no

 8.1. Size:206K  1
ntmfd5c650nlt1g.pdf pdf_icon

NTMFD5875NLT1G

NTMFD5C650NL MOSFET Power, Dual, N-Channel 60 V, 4.2 mW, 111 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.2 mW @ 10 V 60 V Compliant 111 A 5.8 mW @ 4.5 V

 8.2. Size:345K  1
ntmfd5c674nlt1g.pdf pdf_icon

NTMFD5875NLT1G

NTMFD5C674NL MOSFET Dual, N-Channel 60 V, 14.4 mW, 42 A Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 14.4 mW @ 10 V 60 V 42 A MAXIMUM RATINGS (TJ = 2

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