NTMFD5875NLT1G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFD5875NLT1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 32 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 22 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 15.8 nS
Cossⓘ - Capacitancia de salida: 55 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm
Encapsulados: DFN8-5X6
Búsqueda de reemplazo de NTMFD5875NLT1G MOSFET
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NTMFD5875NLT1G datasheet
..1. Size:132K 1
ntmfd5875nlt1g.pdf 
MOSFET Power, Dual N-Channel, Logic Level, Dual SO8FL 60 V, 33 mW, 22 A NTMFD5875NL www.onsemi.com Features Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses 33 mW @ 10 V These Devices are Pb-Free, Halogen Free and are RoHS Compliant 60 V 22 A 45 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise no
3.1. Size:132K onsemi
ntmfd5875nl.pdf 
MOSFET Power, Dual N-Channel, Logic Level, Dual SO8FL 60 V, 33 mW, 22 A NTMFD5875NL www.onsemi.com Features Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses 33 mW @ 10 V These Devices are Pb-Free, Halogen Free and are RoHS Compliant 60 V 22 A 45 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise no
8.1. Size:206K 1
ntmfd5c650nlt1g.pdf 
NTMFD5C650NL MOSFET Power, Dual, N-Channel 60 V, 4.2 mW, 111 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.2 mW @ 10 V 60 V Compliant 111 A 5.8 mW @ 4.5 V
8.2. Size:345K 1
ntmfd5c674nlt1g.pdf 
NTMFD5C674NL MOSFET Dual, N-Channel 60 V, 14.4 mW, 42 A Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 14.4 mW @ 10 V 60 V 42 A MAXIMUM RATINGS (TJ = 2
8.3. Size:205K 1
ntmfd5c470nlt1g.pdf 
NTMFD5C470NL MOSFET Power, Dual, N-Channel 40 V, 11.5 mW, 36 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 11.5 mW @ 10 V 40 V Compliant 36 A 17.8 mW @ 4.5 V
8.4. Size:206K 1
ntmfd5c466nlt1g.pdf 
NTMFD5C466NL MOSFET Power, Dual, N-Channel 40 V, 7.4 mW, 52 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 7.4 mW @ 10 V 40 V Compliant 52 A 12.6 mW @ 4.5 V
8.5. Size:192K 1
ntmfd5c466nt1g.pdf 
NTMFD5C466N Power MOSFET 40 V, 8.1 mW, 49 A, Dual N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com These Devices are Pb-Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) V(BR)DSS RDS(ON) MAX ID MAX Parameter Symbol Value
8.6. Size:192K onsemi
ntmfd5c466n.pdf 
NTMFD5C466N Power MOSFET 40 V, 8.1 mW, 49 A, Dual N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com These Devices are Pb-Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) V(BR)DSS RDS(ON) MAX ID MAX Parameter Symbol Value
8.7. Size:206K onsemi
ntmfd5c650nl.pdf 
NTMFD5C650NL MOSFET Power, Dual, N-Channel 60 V, 4.2 mW, 111 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.2 mW @ 10 V 60 V Compliant 111 A 5.8 mW @ 4.5 V
8.8. Size:345K onsemi
ntmfd5c674nl.pdf 
NTMFD5C674NL MOSFET Dual, N-Channel 60 V, 14.4 mW, 42 A Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 14.4 mW @ 10 V 60 V 42 A MAXIMUM RATINGS (TJ = 2
8.9. Size:207K onsemi
ntmfd5c446nl.pdf 
NTMFD5C446NL MOSFET Power, Dual, N-Channel 40 V, 2.65 mW, 145 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2.65 mW @ 10 V 40 V Compliant 145 A 3.9 mW @ 4.5
8.10. Size:206K onsemi
ntmfd5c466nl.pdf 
NTMFD5C466NL MOSFET Power, Dual, N-Channel 40 V, 7.4 mW, 52 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 7.4 mW @ 10 V 40 V Compliant 52 A 12.6 mW @ 4.5 V
8.11. Size:338K onsemi
ntmfd5c680nl.pdf 
NTMFD5C680NL MOSFET Power, Dual, N-Channel 60 V, 28 mW, 26 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 28 mW @ 10 V 60 V Compliant 26 A 41 mW @ 4.5 V MAXI
8.12. Size:205K onsemi
ntmfd5c470nl.pdf 
NTMFD5C470NL MOSFET Power, Dual, N-Channel 40 V, 11.5 mW, 36 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 11.5 mW @ 10 V 40 V Compliant 36 A 17.8 mW @ 4.5 V
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