NTMFD5875NLT1G. Аналоги и основные параметры
Наименование производителя: NTMFD5875NLT1G
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 32 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 22 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 15.8 ns
Cossⓘ - Выходная емкость: 55 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.033 Ohm
Тип корпуса: DFN8-5X6
Аналог (замена) для NTMFD5875NLT1G
- подборⓘ MOSFET транзистора по параметрам
NTMFD5875NLT1G даташит
..1. Size:132K 1
ntmfd5875nlt1g.pdf 

MOSFET Power, Dual N-Channel, Logic Level, Dual SO8FL 60 V, 33 mW, 22 A NTMFD5875NL www.onsemi.com Features Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses 33 mW @ 10 V These Devices are Pb-Free, Halogen Free and are RoHS Compliant 60 V 22 A 45 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise no
3.1. Size:132K onsemi
ntmfd5875nl.pdf 

MOSFET Power, Dual N-Channel, Logic Level, Dual SO8FL 60 V, 33 mW, 22 A NTMFD5875NL www.onsemi.com Features Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses 33 mW @ 10 V These Devices are Pb-Free, Halogen Free and are RoHS Compliant 60 V 22 A 45 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise no
8.1. Size:206K 1
ntmfd5c650nlt1g.pdf 

NTMFD5C650NL MOSFET Power, Dual, N-Channel 60 V, 4.2 mW, 111 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.2 mW @ 10 V 60 V Compliant 111 A 5.8 mW @ 4.5 V
8.2. Size:345K 1
ntmfd5c674nlt1g.pdf 

NTMFD5C674NL MOSFET Dual, N-Channel 60 V, 14.4 mW, 42 A Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 14.4 mW @ 10 V 60 V 42 A MAXIMUM RATINGS (TJ = 2
8.3. Size:205K 1
ntmfd5c470nlt1g.pdf 

NTMFD5C470NL MOSFET Power, Dual, N-Channel 40 V, 11.5 mW, 36 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 11.5 mW @ 10 V 40 V Compliant 36 A 17.8 mW @ 4.5 V
8.4. Size:206K 1
ntmfd5c466nlt1g.pdf 

NTMFD5C466NL MOSFET Power, Dual, N-Channel 40 V, 7.4 mW, 52 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 7.4 mW @ 10 V 40 V Compliant 52 A 12.6 mW @ 4.5 V
8.5. Size:192K 1
ntmfd5c466nt1g.pdf 

NTMFD5C466N Power MOSFET 40 V, 8.1 mW, 49 A, Dual N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com These Devices are Pb-Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) V(BR)DSS RDS(ON) MAX ID MAX Parameter Symbol Value
8.6. Size:192K onsemi
ntmfd5c466n.pdf 

NTMFD5C466N Power MOSFET 40 V, 8.1 mW, 49 A, Dual N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com These Devices are Pb-Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) V(BR)DSS RDS(ON) MAX ID MAX Parameter Symbol Value
8.7. Size:206K onsemi
ntmfd5c650nl.pdf 

NTMFD5C650NL MOSFET Power, Dual, N-Channel 60 V, 4.2 mW, 111 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.2 mW @ 10 V 60 V Compliant 111 A 5.8 mW @ 4.5 V
8.8. Size:345K onsemi
ntmfd5c674nl.pdf 

NTMFD5C674NL MOSFET Dual, N-Channel 60 V, 14.4 mW, 42 A Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 14.4 mW @ 10 V 60 V 42 A MAXIMUM RATINGS (TJ = 2
8.9. Size:207K onsemi
ntmfd5c446nl.pdf 

NTMFD5C446NL MOSFET Power, Dual, N-Channel 40 V, 2.65 mW, 145 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2.65 mW @ 10 V 40 V Compliant 145 A 3.9 mW @ 4.5
8.10. Size:206K onsemi
ntmfd5c466nl.pdf 

NTMFD5C466NL MOSFET Power, Dual, N-Channel 40 V, 7.4 mW, 52 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 7.4 mW @ 10 V 40 V Compliant 52 A 12.6 mW @ 4.5 V
8.11. Size:338K onsemi
ntmfd5c680nl.pdf 

NTMFD5C680NL MOSFET Power, Dual, N-Channel 60 V, 28 mW, 26 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 28 mW @ 10 V 60 V Compliant 26 A 41 mW @ 4.5 V MAXI
8.12. Size:205K onsemi
ntmfd5c470nl.pdf 

NTMFD5C470NL MOSFET Power, Dual, N-Channel 40 V, 11.5 mW, 36 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 11.5 mW @ 10 V 40 V Compliant 36 A 17.8 mW @ 4.5 V
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