NTMFD5C466NT1G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFD5C466NT1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 38 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 49 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 22 nS
Cossⓘ - Capacitancia de salida: 320 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0081 Ohm
Encapsulados: DFN8-5X6
Búsqueda de reemplazo de NTMFD5C466NT1G MOSFET
- Selecciónⓘ de transistores por parámetros
NTMFD5C466NT1G datasheet
ntmfd5c466nt1g.pdf
NTMFD5C466N Power MOSFET 40 V, 8.1 mW, 49 A, Dual N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com These Devices are Pb-Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) V(BR)DSS RDS(ON) MAX ID MAX Parameter Symbol Value
ntmfd5c466nlt1g.pdf
NTMFD5C466NL MOSFET Power, Dual, N-Channel 40 V, 7.4 mW, 52 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 7.4 mW @ 10 V 40 V Compliant 52 A 12.6 mW @ 4.5 V
ntmfd5c466n.pdf
NTMFD5C466N Power MOSFET 40 V, 8.1 mW, 49 A, Dual N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com These Devices are Pb-Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) V(BR)DSS RDS(ON) MAX ID MAX Parameter Symbol Value
ntmfd5c466nl.pdf
NTMFD5C466NL MOSFET Power, Dual, N-Channel 40 V, 7.4 mW, 52 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 7.4 mW @ 10 V 40 V Compliant 52 A 12.6 mW @ 4.5 V
Otros transistores... MSK3419DF , MSK50N03DF , MSK50P03NF , MSK60N03DF , MSK7804 , MSK80N03NF , NTMFD5875NLT1G , NTMFD5C466NLT1G , TK10A60D , NTMFD5C470NLT1G , NTMFD5C650NLT1G , NTMFD5C674NLT1G , NTMFD6H840NLT1G , NTMFD6H846NLT1G , NTMFS006N12MCT1G , NTMFS008N12MCT1G , NTMFS015N10MCLT1G .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
Popular searches
irfz48 | bf494 transistor equivalent | 2sc458 pinout | bc183l | tip35 datasheet | tip36c datasheet | 2sc461 | hy1906