NTMFD5C674NLT1G Todos los transistores

 

NTMFD5C674NLT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTMFD5C674NLT1G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 37 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 42 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 32.1 nS
   Cossⓘ - Capacitancia de salida: 313 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0144 Ohm
   Paquete / Cubierta: DFN8-5X6
     - Selección de transistores por parámetros

 

NTMFD5C674NLT1G Datasheet (PDF)

 0.1. Size:345K  1
ntmfd5c674nlt1g.pdf pdf_icon

NTMFD5C674NLT1G

NTMFD5C674NLMOSFET Dual, N-Channel60 V, 14.4 mW, 42 AFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant14.4 mW @ 10 V60 V42 AMAXIMUM RATINGS (TJ = 2

 2.1. Size:345K  onsemi
ntmfd5c674nl.pdf pdf_icon

NTMFD5C674NLT1G

NTMFD5C674NLMOSFET Dual, N-Channel60 V, 14.4 mW, 42 AFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant14.4 mW @ 10 V60 V42 AMAXIMUM RATINGS (TJ = 2

 6.1. Size:206K  1
ntmfd5c650nlt1g.pdf pdf_icon

NTMFD5C674NLT1G

NTMFD5C650NLMOSFET Power, Dual,N-Channel60 V, 4.2 mW, 111 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.2 mW @ 10 V60 VCompliant111 A5.8 mW @ 4.5 V

 6.2. Size:206K  onsemi
ntmfd5c650nl.pdf pdf_icon

NTMFD5C674NLT1G

NTMFD5C650NLMOSFET Power, Dual,N-Channel60 V, 4.2 mW, 111 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.2 mW @ 10 V60 VCompliant111 A5.8 mW @ 4.5 V

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: FX20ASJ-2 | SVF4N60CAF | APT6025BVR | 2N7064 | IXFK48N50Q | FQD5N15TF | SSA50R060S

 

 
Back to Top

 


 
.