Справочник MOSFET. NTMFD5C674NLT1G

 

NTMFD5C674NLT1G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NTMFD5C674NLT1G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 37 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 42 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 32.1 ns
   Cossⓘ - Выходная емкость: 313 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0144 Ohm
   Тип корпуса: DFN8-5X6
     - подбор MOSFET транзистора по параметрам

 

NTMFD5C674NLT1G Datasheet (PDF)

 0.1. Size:345K  1
 ntmfd5c674nlt1g.pdf pdf_icon

NTMFD5C674NLT1G

NTMFD5C674NLMOSFET Dual, N-Channel60 V, 14.4 mW, 42 AFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant14.4 mW @ 10 V60 V42 AMAXIMUM RATINGS (TJ = 2

 2.1. Size:345K  onsemi
 ntmfd5c674nl.pdf pdf_icon

NTMFD5C674NLT1G

NTMFD5C674NLMOSFET Dual, N-Channel60 V, 14.4 mW, 42 AFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant14.4 mW @ 10 V60 V42 AMAXIMUM RATINGS (TJ = 2

 6.1. Size:206K  1
 ntmfd5c650nlt1g.pdf pdf_icon

NTMFD5C674NLT1G

NTMFD5C650NLMOSFET Power, Dual,N-Channel60 V, 4.2 mW, 111 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.2 mW @ 10 V60 VCompliant111 A5.8 mW @ 4.5 V

 6.2. Size:206K  onsemi
 ntmfd5c650nl.pdf pdf_icon

NTMFD5C674NLT1G

NTMFD5C650NLMOSFET Power, Dual,N-Channel60 V, 4.2 mW, 111 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.2 mW @ 10 V60 VCompliant111 A5.8 mW @ 4.5 V

ПОКАЗАТЬ ЕЩЁ

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History: VB1106K | SIHG47N60S | APT8024B2LL | 9N95 | RJK0331DPB-00 | STL12P6F6 | HGI110N08AL

 

 
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