NTMFD6H846NLT1G Todos los transistores

 

NTMFD6H846NLT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTMFD6H846NLT1G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 31 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: DFN8-5X6
     - Selección de transistores por parámetros

 

NTMFD6H846NLT1G Datasheet (PDF)

 0.1. Size:202K  1
 ntmfd6h846nlt1g.pdf pdf_icon

NTMFD6H846NLT1G

MOSFET - Power, DualN-Channel80 V, 15 mW, 31 ANTMFD6H846NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant15 mW @ 10 V80 V31 AMAXIMUM RATINGS (TJ = 25C unless otherwise n

 2.1. Size:202K  onsemi
 ntmfd6h846nl.pdf pdf_icon

NTMFD6H846NLT1G

MOSFET - Power, DualN-Channel80 V, 15 mW, 31 ANTMFD6H846NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant15 mW @ 10 V80 V31 AMAXIMUM RATINGS (TJ = 25C unless otherwise n

 5.1. Size:126K  1
 ntmfd6h840nlt1g.pdf pdf_icon

NTMFD6H846NLT1G

NTMFD6H840NLPower MOSFET80 V, 6.9 mW, 74 A, Dual N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)6.9 mW @ 10 VParame

 5.2. Size:126K  onsemi
 ntmfd6h840nl.pdf pdf_icon

NTMFD6H846NLT1G

NTMFD6H840NLPower MOSFET80 V, 6.9 mW, 74 A, Dual N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)6.9 mW @ 10 VParame

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FMC20N50E | IRLR3715

 

 
Back to Top

 


 
.