NTMFD6H846NLT1G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFD6H846NLT1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 34 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 31 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 120 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Encapsulados: DFN8-5X6
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NTMFD6H846NLT1G datasheet
ntmfd6h846nlt1g.pdf
MOSFET - Power, Dual N-Channel 80 V, 15 mW, 31 A NTMFD6H846NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 15 mW @ 10 V 80 V 31 A MAXIMUM RATINGS (TJ = 25 C unless otherwise n
ntmfd6h846nl.pdf
MOSFET - Power, Dual N-Channel 80 V, 15 mW, 31 A NTMFD6H846NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 15 mW @ 10 V 80 V 31 A MAXIMUM RATINGS (TJ = 25 C unless otherwise n
ntmfd6h840nlt1g.pdf
NTMFD6H840NL Power MOSFET 80 V, 6.9 mW, 74 A, Dual N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 6.9 mW @ 10 V Parame
ntmfd6h840nl.pdf
NTMFD6H840NL Power MOSFET 80 V, 6.9 mW, 74 A, Dual N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 6.9 mW @ 10 V Parame
Otros transistores... MSK80N03NF , NTMFD5875NLT1G , NTMFD5C466NLT1G , NTMFD5C466NT1G , NTMFD5C470NLT1G , NTMFD5C650NLT1G , NTMFD5C674NLT1G , NTMFD6H840NLT1G , IRF1407 , NTMFS006N12MCT1G , NTMFS008N12MCT1G , NTMFS015N10MCLT1G , NTMFS0D8N02P1ET1G , NTMFS0D9N03CGT1G , NTMFS1D15N03CGT1G , NTMFS1D7N03CGT1G , NTMFS23D9N06HLT1G .
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