NTMFD6H846NLT1G PDF and Equivalents Search

 

NTMFD6H846NLT1G Specs and Replacement

Type Designator: NTMFD6H846NLT1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 31 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: DFN8-5X6

NTMFD6H846NLT1G substitution

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NTMFD6H846NLT1G datasheet

 0.1. Size:202K  1
 ntmfd6h846nlt1g.pdf pdf_icon

NTMFD6H846NLT1G

MOSFET - Power, Dual N-Channel 80 V, 15 mW, 31 A NTMFD6H846NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 15 mW @ 10 V 80 V 31 A MAXIMUM RATINGS (TJ = 25 C unless otherwise n... See More ⇒

 2.1. Size:202K  onsemi
 ntmfd6h846nl.pdf pdf_icon

NTMFD6H846NLT1G

MOSFET - Power, Dual N-Channel 80 V, 15 mW, 31 A NTMFD6H846NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 15 mW @ 10 V 80 V 31 A MAXIMUM RATINGS (TJ = 25 C unless otherwise n... See More ⇒

 5.1. Size:126K  1
 ntmfd6h840nlt1g.pdf pdf_icon

NTMFD6H846NLT1G

NTMFD6H840NL Power MOSFET 80 V, 6.9 mW, 74 A, Dual N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 6.9 mW @ 10 V Parame... See More ⇒

 5.2. Size:126K  onsemi
 ntmfd6h840nl.pdf pdf_icon

NTMFD6H846NLT1G

NTMFD6H840NL Power MOSFET 80 V, 6.9 mW, 74 A, Dual N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 6.9 mW @ 10 V Parame... See More ⇒

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Detailed specifications: MSK80N03NF, NTMFD5875NLT1G, NTMFD5C466NLT1G, NTMFD5C466NT1G, NTMFD5C470NLT1G, NTMFD5C650NLT1G, NTMFD5C674NLT1G, NTMFD6H840NLT1G, IRF1407, NTMFS006N12MCT1G, NTMFS008N12MCT1G, NTMFS015N10MCLT1G, NTMFS0D8N02P1ET1G, NTMFS0D9N03CGT1G, NTMFS1D15N03CGT1G, NTMFS1D7N03CGT1G, NTMFS23D9N06HLT1G

Keywords - NTMFD6H846NLT1G MOSFET specs

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