NTMFS5C426NT1G Todos los transistores

 

NTMFS5C426NT1G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTMFS5C426NT1G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 128 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 235 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 47 nS
   Cossⓘ - Capacitancia de salida: 2100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0013 Ohm
   Paquete / Cubierta: DFN5
 

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NTMFS5C426NT1G datasheet

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ntmfs5c426nt1g.pdf pdf_icon

NTMFS5C426NT1G

MOSFET Power, Single N-Channel 40 V, 1.3 mW, 235 A NTMFS5C426N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 40 V 1.3 mW @ 10 V 235 A MAXIMUM RATINGS (TJ = 25 C unless otherw

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ntmfs5c426nlt1g.pdf pdf_icon

NTMFS5C426NT1G

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 3.2. Size:172K  onsemi
ntmfs5c426n.pdf pdf_icon

NTMFS5C426NT1G

MOSFET Power, Single N-Channel 40 V, 1.3 mW, 235 A NTMFS5C426N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 40 V 1.3 mW @ 10 V 235 A MAXIMUM RATINGS (TJ = 25 C unless otherw

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ntmfs5c423nlt1g.pdf pdf_icon

NTMFS5C426NT1G

NTMFS5C423NL Power MOSFET 40 V, 2.0 mW, 150 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 2.0 mW @ 10 V 40

Otros transistores... NTMFS4D2N10MDT1G , NTMFS5C404NLTT1G , NTMFS5C404NT3G , NTMFS5C406NLT1G , NTMFS5C406NT1G , NTMFS5C410NT3G , NTMFS5C423NLT1G , NTMFS5C426NLT1G , STP65NF06 , NTMFS5C430NLT1G , NTMFS5C430NLT3G , NTMFS5C442NLT1G , NTMFS5C442NT3G , NTMFS5C450NLT3G , NTMFS5C450NT3G , NTMFS5C456NLT3G , NTMFS5C460NLT3G .

History: TK290P65Y | AGM1095MAP

 

 
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