NTMFS5C426NT1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFS5C426NT1G  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 128 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 235 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 47 nS

Cossⓘ - Capacitancia de salida: 2100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0013 Ohm

Encapsulados: DFN5

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NTMFS5C426NT1G datasheet

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NTMFS5C426NT1G

MOSFET Power, Single N-Channel 40 V, 1.3 mW, 235 A NTMFS5C426N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 40 V 1.3 mW @ 10 V 235 A MAXIMUM RATINGS (TJ = 25 C unless otherw

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NTMFS5C426NT1G

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

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NTMFS5C426NT1G

MOSFET Power, Single N-Channel 40 V, 1.3 mW, 235 A NTMFS5C426N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 40 V 1.3 mW @ 10 V 235 A MAXIMUM RATINGS (TJ = 25 C unless otherw

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 ntmfs5c423nlt1g.pdf pdf_icon

NTMFS5C426NT1G

NTMFS5C423NL Power MOSFET 40 V, 2.0 mW, 150 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 2.0 mW @ 10 V 40

MOSTRAR MÁS

Otros transistores... NTMFS4D2N10MDT1G, NTMFS5C404NLTT1G, NTMFS5C404NT3G, NTMFS5C406NLT1G, NTMFS5C406NT1G, NTMFS5C410NT3G, NTMFS5C423NLT1G, NTMFS5C426NLT1G, 2N60, NTMFS5C430NLT1G, NTMFS5C430NLT3G, NTMFS5C442NLT1G, NTMFS5C442NT3G, NTMFS5C450NLT3G, NTMFS5C450NT3G, NTMFS5C456NLT3G, NTMFS5C460NLT3G