NTMFS5C426NT1G
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTMFS5C426NT1G
Marking Code: 5C426N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 128
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 235
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 65
nC
trⓘ - Rise Time: 47
nS
Cossⓘ -
Output Capacitance: 2100
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0013
Ohm
Package:
DFN5
NTMFS5C426NT1G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTMFS5C426NT1G
Datasheet (PDF)
..1. Size:172K 1
ntmfs5c426nt1g.pdf
MOSFET Power, SingleN-Channel40 V, 1.3 mW, 235 ANTMFS5C426NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant40 V 1.3 mW @ 10 V 235 AMAXIMUM RATINGS (TJ = 25C unless otherw
3.1. Size:195K 1
ntmfs5c426nlt1g.pdf
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3.2. Size:172K onsemi
ntmfs5c426n.pdf
MOSFET Power, SingleN-Channel40 V, 1.3 mW, 235 ANTMFS5C426NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant40 V 1.3 mW @ 10 V 235 AMAXIMUM RATINGS (TJ = 25C unless otherw
5.1. Size:79K 1
ntmfs5c423nlt1g.pdf
NTMFS5C423NLPower MOSFET40 V, 2.0 mW, 150 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)2.0 mW @ 10 V40
5.2. Size:120K onsemi
ntmfs5c423nl.pdf
NTMFS5C423NLPower MOSFET40 V, 2.0 mW, 150 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)2.0 mW @ 10 VPar
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