NTMFS5C670NLT3G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS5C670NLT3G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 79 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 93 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14.9 nS
Cossⓘ - Capacitancia de salida: 900 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0047 Ohm
Encapsulados: DFN5
Búsqueda de reemplazo de NTMFS5C670NLT3G MOSFET
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NTMFS5C670NLT3G datasheet
ntmfs5c670nlt3g.pdf
NTMFS5C670NL Power MOSFET 60 V, 6.1 mW, 71 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 6.1 mW @ 10 V 60 V
ntmfs5c670nl.pdf
NTMFS5C670NL Power MOSFET 60 V, 6.1 mW, 71 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 6.1 mW @ 10 V 60 V
ntmfs5c670nt1g.pdf
MOSFET Power, Single, N-Channel 60 V, 7.0 mW, 71 A NTMFS5C670N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 60 V 7.0 mW @ 10 V 71 A MAXIMUM RATINGS (TJ = 25 C unless otherwis
ntmfs5c670n.pdf
MOSFET Power, Single, N-Channel 60 V, 7.0 mW, 71 A NTMFS5C670N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 60 V 7.0 mW @ 10 V 71 A MAXIMUM RATINGS (TJ = 25 C unless otherwis
Otros transistores... NTMFS5C612NLT1G , NTMFS5C612NT1G-TE , NTMFS5C628NLT1G , NTMFS5C628NT1G , NTMFS5C645NLT1G , NTMFS5C645NLT3G , NTMFS5C646NLT1G , NTMFS5C646NLT3G , IRF3205 , NTMFS5C670NT1G , NTMFS5C673NLT1G , NTMFS5C673NT1G , NTMFS5H425NLT1G , NTMFS6B05NT1G , NTMFS6B05NT3G , NTMFS6B14NT3G , NTMFS6H801NT1G .
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