NTMFS5C670NLT3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS5C670NLT3G
Código: 5C646L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 79 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 93 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 33.7 nC
Tiempo de subida (tr): 14.9 nS
Conductancia de drenaje-sustrato (Cd): 900 pF
Resistencia entre drenaje y fuente RDS(on): 0.0047 Ohm
Paquete / Cubierta: DFN5
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NTMFS5C670NLT3G Datasheet (PDF)
ntmfs5c670nlt3g.pdf
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NTMFS5C670NLPower MOSFET60 V, 6.1 mW, 71 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)6.1 mW @ 10 V60 V
ntmfs5c670nl.pdf
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NTMFS5C670NLPower MOSFET60 V, 6.1 mW, 71 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)6.1 mW @ 10 V60 V
ntmfs5c670nt1g.pdf
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MOSFET Power, Single,N-Channel60 V, 7.0 mW, 71 ANTMFS5C670NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant60 V 7.0 mW @ 10 V 71 AMAXIMUM RATINGS (TJ = 25C unless otherwis
ntmfs5c670n.pdf
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MOSFET Power, Single,N-Channel60 V, 7.0 mW, 71 ANTMFS5C670NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant60 V 7.0 mW @ 10 V 71 AMAXIMUM RATINGS (TJ = 25C unless otherwis
Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
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