All MOSFET. NTMFS5C670NLT3G Datasheet

 

NTMFS5C670NLT3G Datasheet and Replacement


   Type Designator: NTMFS5C670NLT3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 93 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 14.9 nS
   Cossⓘ - Output Capacitance: 900 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm
   Package: DFN5
 

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NTMFS5C670NLT3G Datasheet (PDF)

 0.1. Size:79K  1
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NTMFS5C670NLT3G

NTMFS5C670NLPower MOSFET60 V, 6.1 mW, 71 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)6.1 mW @ 10 V60 V

 2.1. Size:114K  onsemi
ntmfs5c670nl.pdf pdf_icon

NTMFS5C670NLT3G

NTMFS5C670NLPower MOSFET60 V, 6.1 mW, 71 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)6.1 mW @ 10 V60 V

 3.1. Size:228K  1
ntmfs5c670nt1g.pdf pdf_icon

NTMFS5C670NLT3G

MOSFET Power, Single,N-Channel60 V, 7.0 mW, 71 ANTMFS5C670NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant60 V 7.0 mW @ 10 V 71 AMAXIMUM RATINGS (TJ = 25C unless otherwis

 3.2. Size:228K  onsemi
ntmfs5c670n.pdf pdf_icon

NTMFS5C670NLT3G

MOSFET Power, Single,N-Channel60 V, 7.0 mW, 71 ANTMFS5C670NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant60 V 7.0 mW @ 10 V 71 AMAXIMUM RATINGS (TJ = 25C unless otherwis

Datasheet: NTMFS5C612NLT1G , NTMFS5C612NT1G-TE , NTMFS5C628NLT1G , NTMFS5C628NT1G , NTMFS5C645NLT1G , NTMFS5C645NLT3G , NTMFS5C646NLT1G , NTMFS5C646NLT3G , IRF3205 , NTMFS5C670NT1G , NTMFS5C673NLT1G , NTMFS5C673NT1G , NTMFS5H425NLT1G , NTMFS6B05NT1G , NTMFS6B05NT3G , NTMFS6B14NT3G , NTMFS6H801NT1G .

History: PSMN4R8-100PSE | HSP0048

Keywords - NTMFS5C670NLT3G MOSFET datasheet

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