NTMFS6B14NT3G Todos los transistores

 

NTMFS6B14NT3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFS6B14NT3G

Código: 6B14N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Máxima disipación de potencia (Pd): 77 W

Voltaje máximo drenador - fuente |Vds|: 100 V

Voltaje máximo fuente - puerta |Vgs|: 20 V

Corriente continua de drenaje |Id|: 50 A

Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V

Carga de la puerta (Qg): 20 nC

Tiempo de subida (tr): 39 nS

Conductancia de drenaje-sustrato (Cd): 260 pF

Resistencia entre drenaje y fuente RDS(on): 0.015 Ohm

Paquete / Cubierta: DFN5

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NTMFS6B14NT3G Datasheet (PDF)

 ..1. Size:171K  1
ntmfs6b14nt3g.pdf

NTMFS6B14NT3G NTMFS6B14NT3G

NTMFS6B14NMOSFET Power, Single,N-Channel100 V, 15 mW, 50 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS100 V 15 mW @ 10 V 50 ACompliantMAXIMUM RATINGS (TJ

 4.1. Size:72K  onsemi
ntmfs6b14n.pdf

NTMFS6B14NT3G NTMFS6B14NT3G

NTMFS6B14NPower MOSFET100 V, 15 mW, 50 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted

 7.1. Size:77K  1
ntmfs6b05nt1g.pdf

NTMFS6B14NT3G NTMFS6B14NT3G

NTMFS6B05NPower MOSFET100 V, 8 mW, 104 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted

 7.2. Size:171K  1
ntmfs6b05nt3g.pdf

NTMFS6B14NT3G NTMFS6B14NT3G

NTMFS6B05NMOSFET Power, Single,N-Channel100 V, 8 mW, 104 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS100 V 8 mW @ 10 V 104 ACompliantMAXIMUM RATINGS (TJ

 7.3. Size:72K  onsemi
ntmfs6b05n.pdf

NTMFS6B14NT3G NTMFS6B14NT3G

NTMFS6B05NPower MOSFET100 V, 8 mW, 104 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted

 7.4. Size:72K  onsemi
ntmfs6b03n.pdf

NTMFS6B14NT3G NTMFS6B14NT3G

NTMFS6B03NPower MOSFET100 V, 4.8 mW, 132 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise not

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