All MOSFET. NTMFS6B14NT3G Datasheet

 

NTMFS6B14NT3G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTMFS6B14NT3G
   Marking Code: 6B14N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 77 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: DFN5

 NTMFS6B14NT3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTMFS6B14NT3G Datasheet (PDF)

 ..1. Size:171K  1
 ntmfs6b14nt3g.pdf

NTMFS6B14NT3G NTMFS6B14NT3G

NTMFS6B14NMOSFET Power, Single,N-Channel100 V, 15 mW, 50 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS100 V 15 mW @ 10 V 50 ACompliantMAXIMUM RATINGS (TJ

 4.1. Size:72K  onsemi
 ntmfs6b14n.pdf

NTMFS6B14NT3G NTMFS6B14NT3G

NTMFS6B14NPower MOSFET100 V, 15 mW, 50 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted

 7.1. Size:77K  1
 ntmfs6b05nt1g.pdf

NTMFS6B14NT3G NTMFS6B14NT3G

NTMFS6B05NPower MOSFET100 V, 8 mW, 104 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted

 7.2. Size:171K  1
 ntmfs6b05nt3g.pdf

NTMFS6B14NT3G NTMFS6B14NT3G

NTMFS6B05NMOSFET Power, Single,N-Channel100 V, 8 mW, 104 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS100 V 8 mW @ 10 V 104 ACompliantMAXIMUM RATINGS (TJ

 7.3. Size:72K  onsemi
 ntmfs6b03n.pdf

NTMFS6B14NT3G NTMFS6B14NT3G

NTMFS6B03NPower MOSFET100 V, 4.8 mW, 132 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise not

 7.4. Size:72K  onsemi
 ntmfs6b05n.pdf

NTMFS6B14NT3G NTMFS6B14NT3G

NTMFS6B05NPower MOSFET100 V, 8 mW, 104 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted

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