NVMFD5483NLT1G Todos los transistores

 

NVMFD5483NLT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NVMFD5483NLT1G
   Código: 5483NL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 44.1 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 24 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 23.4 nC
   Tiempo de subida (tr): 10.3 nS
   Conductancia de drenaje-sustrato (Cd): 152 pF
   Resistencia entre drenaje y fuente RDS(on): 0.036 Ohm
   Paquete / Cubierta: DFN8-5X6

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NVMFD5483NLT1G Datasheet (PDF)

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NVMFD5483NLT1G
NVMFD5483NLT1G

NVMFD5483NLMOSFET Power, DualN-Channel60 V, 36 mW, 24 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses36 mW @ 10 V 175C Operating Temperature60 V 24 A NVMFD5483NLWF - Wettable Flank Option for Enhanced Optical 45 mW @ 4

 3.1. Size:76K  onsemi
nvmfd5483nl.pdf

NVMFD5483NLT1G
NVMFD5483NLT1G

NVMFD5483NLPower MOSFET60 V, 36 mW, 24 A, Dual N-ChannelFeatures Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses 175C Operating TemperatureV(BR)DSS RDS(on) MAX ID MAX NVMFD5483NLWF - Wettable Flank Option for Enhanced Optical36 mW @ 10 VInspection60 V 24 A

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NVMFD5483NLT1G
NVMFD5483NLT1G

 6.2. Size:76K  onsemi
nvmfd5485nl.pdf

NVMFD5483NLT1G
NVMFD5483NLT1G

NVMFD5485NLPower MOSFET60 V, 44 mW, 20 A, Dual N-ChannelFeatures Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses 175C Operating TemperatureV(BR)DSS RDS(on) MAX ID MAX NVMFD5485NLWF - Wettable Flank Option for Enhanced Optical44 mW @ 10 VInspection60 V 20 A

 6.3. Size:77K  onsemi
nvmfd5489nl.pdf

NVMFD5483NLT1G
NVMFD5483NLT1G

NVMFD5489NLPower MOSFET60 V, 65 mW, 12 A, Dual N-Ch Logic LevelFeatures Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses 175C Operating TemperatureV(BR)DSS RDS(on) MAX ID MAX NVMFD5489NLWF - Wettable Flank Option for Enhanced Optical65 mW @ 10 VInspection60 V

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