FDP120N10 Todos los transistores

 ..1. Size:685K  fairchild semi
 fdp120n10.pdf

March 2009 FDP120N10 tm N-Channel PowerTrench MOSFET 100V, 74A, 12m Features Description RDS(on) = 9.7m ( Typ.)@ VGS = 10V, ID = 74A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been espe- Fast Switching Speed cially tailored to minimize the on-state resistance and yet maintain superior switching performanc

 ..2. Size:284K  inchange semiconductor
 fdp120n10.pdf

 8.1. Size:260K  fairchild semi
 fdp120an15a0.pdf

September 2002 FDP120AN15A0 / FDD120AN15A0 N-Channel PowerTrench MOSFET 150V, 14A, 120m Features Applications rDS(ON) = 101m (Typ.), VGS = 10V, ID = 4A DC/DC Converters and Off-line UPS Qg(tot) = 11.2nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Qrr Body Diode High Volta

 8.2. Size:251K  fairchild semi
 fdp120an15a0 fdd120an15a0.pdf

September 2002 FDP120AN15A0 / FDD120AN15A0 N-Channel PowerTrench MOSFET 150V, 14A, 120m Features Applications rDS(ON) = 101m (Typ.), VGS = 10V, ID = 4A DC/DC Converters and Off-line UPS Qg(tot) = 11.2nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Qrr Body Diode High Volta

 9.1. Size:377K  fairchild semi
 fdp12n50nz fdpf12n50nz.pdf

October 2010 UniFET-IITM FDP12N50NZ / FDPF12N50NZ N-Channel MOSFET 500V, 11.5A, 0.52 Features Description RDS(on) = 0.46 ( Typ. ) @ VGS = 10V, ID = 5.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 23nC ) stripe, DMOS technology. Low Crss ( Typ. 14pF ) This advanced tech

 9.2. Size:446K  fairchild semi
 fdp12n50 fdpf12n50.pdf

June 2007 UniFETTM FDP12N50 / FDPF12N50 tm N-Channel MOSFET 500V, 11.5A, 0.65 Features Description RDS(on) = 0.55 (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 22nC) stripe, DMOS technology. Low Crss ( Typ. 11pF) This advanced technology has be

 9.3. Size:695K  fairchild semi
 fdp12n50f fdpf12n50ft.pdf

December 2007 UniFETTM FDP12N50F / FDPF12N50FT tm N-Channel MOSFET 500V, 11.5A, 0.7 Features Description RDS(on) = 0.59 ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 21nC) DMOS technology. Low Crss ( Typ. 11pF) This advance technolog

 9.4. Size:646K  fairchild semi
 fdp12n50u fdpf12n50ut.pdf

November 2007 Ultra FRFETTM FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8 Features Description RDS(on) = 0.65 ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 21nC) DMOS technology. Low Crss ( Typ. 11pF) This advance

 9.5. Size:284K  fairchild semi
 fdp12n60nz fdpf12n60nz.pdf

September 2010 UniFET-II TM FDP12N60NZ / FDPF12N60NZ N-Channel MOSFET 600V, 12A, 0.65 Features Description RDS(on) = 0.53 ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 26nC) DOMS technology. Low Crss ( Typ. 12pF) This advance techno

 9.6. Size:535K  fairchild semi
 fdp12n50 fdpf12n50t.pdf

May 2012 UniFETTM FDP12N50 / FDPF12N50T tm N-Channel MOSFET 500V, 11.5A, 0.65 Features Description RDS(on) = 0.55 (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 22nC) stripe, DMOS technology. Low Crss ( Typ. 11pF) This advanced technology has be

 9.7. Size:643K  onsemi
 fdp12n60nz fdpf12n60nz.pdf

November 2013 FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET 600 V, 12 A, 650 m Features Description RDS(on) = 530 m (Typ.) @ VGS = 10 V, ID = 6 A UniFETTM II MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 26 nC) technology. This advanced MOSFET family has the smallest Low Crss (Typ.

 9.8. Size:739K  onsemi
 fdp12n50 fdpf12n50t.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.9. Size:259K  inchange semiconductor
 fdp12n50nz.pdf

Isc N-Channel MOSFET Transistor FDP12N50NZ FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-S