All MOSFET. FDP120N10 Datasheet

 

FDP120N10 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDP120N10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 170 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 74 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm

Package: TO220

FDP120N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDP120N10 Datasheet (PDF)

1.1. fdp120n10.pdf Size:685K _fairchild_semi

FDP120N10
FDP120N10

March 2009 FDP120N10 tm N-Channel PowerTrench® MOSFET 100V, 74A, 12m? Features Description • RDS(on) = 9.7m? ( Typ.)@ VGS = 10V, ID = 74A This N-Channel MOSFET is produced using Fairchild Semicon- ductor’s advanced PowerTrench process that has been espe- • Fast Switching Speed cially tailored to minimize the on-state resistance and yet maintain superior switching performance. • Low Ga

4.1. fdp120an15a0 fdd120an15a0.pdf Size:251K _fairchild_semi

FDP120N10
FDP120N10

September 2002 FDP120AN15A0 / FDD120AN15A0 N-Channel PowerTrench® MOSFET 150V, 14A, 120m? Features Applications • rDS(ON) = 101m? (Typ.), VGS = 10V, ID = 4A • DC/DC Converters and Off-line UPS • Qg(tot) = 11.2nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge • Primary Switch for 24V and 48V Systems • Low Qrr Body Diode • High Voltage Synchronous Rectifier

5.1. fdp12n50 fdpf12n50.pdf Size:446K _fairchild_semi

FDP120N10
FDP120N10

June 2007 UniFETTM FDP12N50 / FDPF12N50 tm N-Channel MOSFET 500V, 11.5A, 0.65? Features Description • RDS(on) = 0.55? (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 22nC) stripe, DMOS technology. • Low Crss ( Typ. 11pF) This advanced technology has been especially

5.2. fdp12n50nz fdpf12n50nz.pdf Size:377K _fairchild_semi

FDP120N10
FDP120N10

October 2010 UniFET-IITM FDP12N50NZ / FDPF12N50NZ N-Channel MOSFET 500V, 11.5A, 0.52? Features Description • RDS(on) = 0.46? ( Typ. ) @ VGS = 10V, ID = 5.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 23nC ) stripe, DMOS technology. • Low Crss ( Typ. 14pF ) This advanced technology has be

5.3. fdp12n60nz fdpf12n60nz.pdf Size:284K _fairchild_semi

FDP120N10
FDP120N10

September 2010 UniFET-II TM FDP12N60NZ / FDPF12N60NZ N-Channel MOSFET? 600V, 12A, 0.65? Features Description • RDS(on) = 0.53? ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( Typ. 26nC) DOMS technology. • Low Crss ( Typ. 12pF) This advance technology has been esp

5.4. fdp12n50f fdpf12n50ft.pdf Size:695K _fairchild_semi

FDP120N10
FDP120N10

December 2007 UniFETTM FDP12N50F / FDPF12N50FT tm N-Channel MOSFET 500V, 11.5A, 0.7? Features Description • RDS(on) = 0.59? ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( Typ. 21nC) DMOS technology. • Low Crss ( Typ. 11pF) This advance technology has been espe

5.5. fdp12n50u fdpf12n50ut.pdf Size:646K _fairchild_semi

FDP120N10
FDP120N10

November 2007 Ultra FRFETTM FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8? Features Description • RDS(on) = 0.65? ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( Typ. 21nC) DMOS technology. • Low Crss ( Typ. 11pF) This advance technology has

5.6. fdp12n50 fdpf12n50t.pdf Size:535K _fairchild_semi

FDP120N10
FDP120N10

May 2012 UniFETTM FDP12N50 / FDPF12N50T tm N-Channel MOSFET 500V, 11.5A, 0.65Ω Features Description • RDS(on) = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 22nC) stripe, DMOS technology. • Low Crss ( Typ. 11pF) This advanced technology has be

Datasheet: FDP085N10A_F102 , STM4615 , FDP090N10 , STM4605 , FDP100N10 , STM4550 , FDP10N60NZ , STM4532 , IRF740 , STM4470E , FDP12N50 , FDP12N50NZ , FDP12N60NZ , STM4470A , FDP150N10 , STM4470 , FDP150N10A_F102 .

 


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