STM4470E Todos los transistores

 

STM4470E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STM4470E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9.5 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: SOP8

 Búsqueda de reemplazo de MOSFET STM4470E

 

STM4470E Datasheet (PDF)

 ..1. Size:116K  samhop
stm4470e.pdf

STM4470E
STM4470E

STM4470ESamHop Microelectronics Corp.May. 15 2007 ver1.0N-Channel Enhancement Mode Field Effect TransistorF E ATUR E SPRODUCT SUMMARYS uper high dense cell design for low R DS (ON).VDSS ID RDS(ON) ( m ) MaxR ugged and reliable.12 @ VGS = 10V40V 9.5AS urface Mount Package.15 @ VGS = 4.5VE S D Protected.SO-81ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise

 7.1. Size:117K  samhop
stm4470a.pdf

STM4470E
STM4470E

STM4470ASamHop Microelectronics Corp.May, 10 2007N-Channel Enhancement Mode Field Effect TransistorF E ATUR E SPRODUCT SUMMARYS uper high dense cell design for low R DS (ON).VDSS ID RDS(ON) ( m ) MaxR ugged and reliable.10.5 @ VGS = 10V40V 10AS urface Mount Package.13.5 @ VGS = 4.5VE S D Protected.SO-81ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise note

 7.2. Size:137K  samhop
stm4470.pdf

STM4470E
STM4470E

GreenProductSTM4470SamHop Microelectronics Corp.Oct. 16. 2006 Ver1.1N-Channel Enhancement Mode Field Effect TransistorPRODUCT SUMMARY FEATURESdSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) ( m ) MaxRugged and reliable.10 @ VGS = 10V40V 10ASurface Mount Package.13 @ VGS = 4.5VSO-81ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)Para

 8.1. Size:140K  samhop
stm4472.pdf

STM4470E
STM4470E

GreenProductS TM4472S amHop Microelectronics C orp.Jan.7 ,2008 ver1.0N- Channel nhancement Mode Field Effect ransistorE TF E ATUR E SPR ODUC T S UMMAR YS uper high dense cell design for low R DS (ON).ID R DS (ON) ( m ) MaxVDS SR ugged and reliable.24 @ VG S = 10VS urface Mount Package.40V 7 A30 @ VG S = 4.5VE S D Protected.S O-81ABS OLUTE MAXIMUM R

Otros transistores... STM4615 , FDP090N10 , STM4605 , FDP100N10 , STM4550 , FDP10N60NZ , STM4532 , FDP120N10 , 20N60 , FDP12N50 , FDP12N50NZ , FDP12N60NZ , STM4470A , FDP150N10 , STM4470 , FDP150N10AF102 , STM4460 .

 

 
Back to Top

 


STM4470E
  STM4470E
  STM4470E
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top