All MOSFET. STM4470E Datasheet

 

STM4470E MOSFET. Datasheet pdf. Equivalent


   Type Designator: STM4470E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.7 V
   |Id|ⓘ - Maximum Drain Current: 9.5 A
   Qgⓘ - Total Gate Charge: 12.5 nC
   Cossⓘ - Output Capacitance: 220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SOP8

 STM4470E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STM4470E Datasheet (PDF)

 ..1. Size:116K  samhop
 stm4470e.pdf

STM4470E STM4470E

STM4470ESamHop Microelectronics Corp.May. 15 2007 ver1.0N-Channel Enhancement Mode Field Effect TransistorF E ATUR E SPRODUCT SUMMARYS uper high dense cell design for low R DS (ON).VDSS ID RDS(ON) ( m ) MaxR ugged and reliable.12 @ VGS = 10V40V 9.5AS urface Mount Package.15 @ VGS = 4.5VE S D Protected.SO-81ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise

 7.1. Size:117K  samhop
 stm4470a.pdf

STM4470E STM4470E

STM4470ASamHop Microelectronics Corp.May, 10 2007N-Channel Enhancement Mode Field Effect TransistorF E ATUR E SPRODUCT SUMMARYS uper high dense cell design for low R DS (ON).VDSS ID RDS(ON) ( m ) MaxR ugged and reliable.10.5 @ VGS = 10V40V 10AS urface Mount Package.13.5 @ VGS = 4.5VE S D Protected.SO-81ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise note

 7.2. Size:137K  samhop
 stm4470.pdf

STM4470E STM4470E

GreenProductSTM4470SamHop Microelectronics Corp.Oct. 16. 2006 Ver1.1N-Channel Enhancement Mode Field Effect TransistorPRODUCT SUMMARY FEATURESdSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) ( m ) MaxRugged and reliable.10 @ VGS = 10V40V 10ASurface Mount Package.13 @ VGS = 4.5VSO-81ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)Para

 8.1. Size:140K  samhop
 stm4472.pdf

STM4470E STM4470E

GreenProductS TM4472S amHop Microelectronics C orp.Jan.7 ,2008 ver1.0N- Channel nhancement Mode Field Effect ransistorE TF E ATUR E SPR ODUC T S UMMAR YS uper high dense cell design for low R DS (ON).ID R DS (ON) ( m ) MaxVDS SR ugged and reliable.24 @ VG S = 10VS urface Mount Package.40V 7 A30 @ VG S = 4.5VE S D Protected.S O-81ABS OLUTE MAXIMUM R

Datasheet: STM4615 , FDP090N10 , STM4605 , FDP100N10 , STM4550 , FDP10N60NZ , STM4532 , FDP120N10 , 20N60 , FDP12N50 , FDP12N50NZ , FDP12N60NZ , STM4470A , FDP150N10 , STM4470 , FDP150N10AF102 , STM4460 .

History: FDMA1025P

 

 
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