FDP150N10 Todos los transistores

 ..1. Size:516K  fairchild semi
 fdp150n10.pdf

July 2008 FDP150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 15m Features General Description RDS(on) = 12m ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching per

 ..2. Size:283K  inchange semiconductor
 fdp150n10.pdf

 0.1. Size:317K  fairchild semi
 fdp150n10a f102.pdf

July 2011 FDP150N10A_F102 tm N-Channel PowerTrench MOSFET 100V, 50A, 15m Features Description RDS(on) = 12.5m ( Typ.)@ VGS = 10V, ID = 50A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yet maintain superior switching performa

 0.2. Size:776K  fairchild semi
 fdp150n10a.pdf

November 2013 FDP150N10A N-Channel PowerTrench MOSFET 100 V, 50 A, 15 m Features Description RDS(on) = 12.5 m (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Fast Switching Speed lored to minimize the on-state resistance while maintaining superior switching performance.

 9.1. Size:194K  fairchild semi
 fdh15n50 fdp15n50 fdb15n50.pdf

August 2003 FDH15N50 / FDP15N50 / FDB15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET Applications Features Low Gate Charge Qg results in Simple Drive Switch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward Converter Ruggedness Single Switch Forward Converter Reduced rDS(ON)

 9.2. Size:181K  fairchild semi
 fdh15n50 fdp15n50.pdf

August 2003 FDH15N50 / FDP15N50 / FDB15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET Applications Features Low Gate Charge Qg results in Simple Drive Switch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward Converter Ruggedness Single Switch Forward Converter Reduced rDS(ON)

 9.3. Size:490K  fairchild semi
 fdp15n65 fdpf15n65.pdf

April 2007 TM UniFET FDP15N65 / FDPF15N65 650V N-Channel MOSFET Features Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 48.5 nC) stripe, DMOS technology. Low Crss ( typical 23.6 pF) This advanced technology has been especia

 9.4. Size:457K  fairchild semi
 fdp15n65 fdpf15n65ydtu.pdf

April 2007 TM UniFET FDP15N65 / FDPF15N65 650V N-Channel MOSFET Features Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 48.5 nC) stripe, DMOS technology. Low Crss ( typical 23.6 pF) This advanced technology has been especia

 9.5. Size:250K  fairchild semi
 fdp15n40 fdpf15n40.pdf

October 2008 UniFETTM FDP15N40 / FDPF15N40 tm N-Channel MOSFET 400V, 15A, 0.3 Features Description RDS(on) = 0.24 ( Typ.)@ VGS = 10V, ID = 7.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low Gate Charge ( Typ. 28nC) stripe, DMOS technology. Low Crss ( Typ. 17pF) This advanced technology has

 9.6. Size:490K  onsemi
 fdp15n65 fdpf15n65.pdf

April 2007 TM UniFET FDP15N65 / FDPF15N65 650V N-Channel MOSFET Features Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 48.5 nC) stripe, DMOS technology. Low Crss ( typical 23.6 pF) This advanced technology has been especia