Справочник MOSFET. FDP150N10

 

FDP150N10 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDP150N10
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 110 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 57 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 53 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm
   Тип корпуса: TO220

 Аналог (замена) для FDP150N10

 

 

FDP150N10 Datasheet (PDF)

 ..1. Size:516K  fairchild semi
fdp150n10.pdf

FDP150N10
FDP150N10

July 2008FDP150N10tmN-Channel PowerTrench MOSFET 100V, 57A, 15mFeatures General Description RDS(on) = 12m ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching per

 ..2. Size:283K  inchange semiconductor
fdp150n10.pdf

FDP150N10
FDP150N10

isc N-Channel MOSFET Transistor FDP150N10FEATURESWith TO-220 packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 15m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

 0.1. Size:317K  fairchild semi
fdp150n10a f102.pdf

FDP150N10
FDP150N10

July 2011FDP150N10A_F102tmN-Channel PowerTrench MOSFET 100V, 50A, 15mFeatures Description RDS(on) = 12.5m ( Typ.)@ VGS = 10V, ID = 50A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superior switching performa

 0.2. Size:776K  fairchild semi
fdp150n10a.pdf

FDP150N10
FDP150N10

November 2013FDP150N10AN-Channel PowerTrench MOSFET100 V, 50 A, 15 mFeatures Description RDS(on) = 12.5 m (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Fast Switching Speedlored to minimize the on-state resistance while maintainingsuperior switching performance.

 9.1. Size:194K  fairchild semi
fdh15n50 fdp15n50 fdb15n50.pdf

FDP150N10
FDP150N10

August 2003FDH15N50 / FDP15N50 / FDB15N5015A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFETApplications Features Low Gate Charge Qg results in Simple DriveSwitch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward ConverterRuggedness Single Switch Forward Converter Reduced rDS(ON)

 9.2. Size:181K  fairchild semi
fdh15n50 fdp15n50.pdf

FDP150N10
FDP150N10

August 2003FDH15N50 / FDP15N50 / FDB15N5015A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFETApplications Features Low Gate Charge Qg results in Simple DriveSwitch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward ConverterRuggedness Single Switch Forward Converter Reduced rDS(ON)

 9.3. Size:490K  fairchild semi
fdp15n65 fdpf15n65.pdf

FDP150N10
FDP150N10

April 2007TMUniFETFDP15N65 / FDPF15N65 650V N-Channel MOSFETFeatures Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 48.5 nC)stripe, DMOS technology. Low Crss ( typical 23.6 pF)This advanced technology has been especia

 9.4. Size:457K  fairchild semi
fdp15n65 fdpf15n65ydtu.pdf

FDP150N10
FDP150N10

April 2007TMUniFETFDP15N65 / FDPF15N65 650V N-Channel MOSFETFeatures Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 48.5 nC)stripe, DMOS technology. Low Crss ( typical 23.6 pF)This advanced technology has been especia

 9.5. Size:250K  fairchild semi
fdp15n40 fdpf15n40.pdf

FDP150N10
FDP150N10

October 2008UniFETTMFDP15N40 / FDPF15N40tmN-Channel MOSFET 400V, 15A, 0.3Features Description RDS(on) = 0.24 ( Typ.)@ VGS = 10V, ID = 7.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 28nC)stripe, DMOS technology. Low Crss ( Typ. 17pF)This advanced technology has

 9.6. Size:490K  onsemi
fdp15n65 fdpf15n65.pdf

FDP150N10
FDP150N10

April 2007TMUniFETFDP15N65 / FDPF15N65 650V N-Channel MOSFETFeatures Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 48.5 nC)stripe, DMOS technology. Low Crss ( typical 23.6 pF)This advanced technology has been especia

Другие MOSFET... FDP10N60NZ , STM4532 , FDP120N10 , STM4470E , FDP12N50 , FDP12N50NZ , FDP12N60NZ , STM4470A , IRFP460 , STM4470 , FDP150N10AF102 , STM4460 , FDP15N40 , STM4446 , FDP16AN08A0 , FDP18N20F , STM4439A .

 

 
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