FDP15N40 Todos los transistores

 

FDP15N40 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDP15N40
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 170 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: TO220
 

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FDP15N40 Datasheet (PDF)

 ..1. Size:250K  fairchild semi
 fdp15n40 fdpf15n40.pdf pdf_icon

FDP15N40

October 2008UniFETTMFDP15N40 / FDPF15N40tmN-Channel MOSFET 400V, 15A, 0.3Features Description RDS(on) = 0.24 ( Typ.)@ VGS = 10V, ID = 7.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 28nC)stripe, DMOS technology. Low Crss ( Typ. 17pF)This advanced technology has

 8.1. Size:194K  fairchild semi
 fdh15n50 fdp15n50 fdb15n50.pdf pdf_icon

FDP15N40

August 2003FDH15N50 / FDP15N50 / FDB15N5015A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFETApplications Features Low Gate Charge Qg results in Simple DriveSwitch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward ConverterRuggedness Single Switch Forward Converter Reduced rDS(ON)

 8.2. Size:181K  fairchild semi
 fdh15n50 fdp15n50.pdf pdf_icon

FDP15N40

August 2003FDH15N50 / FDP15N50 / FDB15N5015A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFETApplications Features Low Gate Charge Qg results in Simple DriveSwitch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward ConverterRuggedness Single Switch Forward Converter Reduced rDS(ON)

 8.3. Size:490K  fairchild semi
 fdp15n65 fdpf15n65.pdf pdf_icon

FDP15N40

April 2007TMUniFETFDP15N65 / FDPF15N65 650V N-Channel MOSFETFeatures Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 48.5 nC)stripe, DMOS technology. Low Crss ( typical 23.6 pF)This advanced technology has been especia

MOSTRAR MÁS

Otros transistores... FDP12N50 , FDP12N50NZ , FDP12N60NZ , STM4470A , FDP150N10 , STM4470 , FDP150N10AF102 , STM4460 , IRFP260N , STM4446 , FDP16AN08A0 , FDP18N20F , STM4439A , FDP18N50 , FDP19N40 , STM4437A , FDP20N50 .

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