FDP15N40 Datasheet. Specs and Replacement

Type Designator: FDP15N40  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 170 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO220

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FDP15N40 substitution

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FDP15N40 datasheet

 ..1. Size:250K  fairchild semi
fdp15n40 fdpf15n40.pdf pdf_icon

FDP15N40

October 2008 UniFETTM FDP15N40 / FDPF15N40 tm N-Channel MOSFET 400V, 15A, 0.3 Features Description RDS(on) = 0.24 ( Typ.)@ VGS = 10V, ID = 7.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low Gate Charge ( Typ. 28nC) stripe, DMOS technology. Low Crss ( Typ. 17pF) This advanced technology has ... See More ⇒

 8.1. Size:194K  fairchild semi
fdh15n50 fdp15n50 fdb15n50.pdf pdf_icon

FDP15N40

August 2003 FDH15N50 / FDP15N50 / FDB15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET Applications Features Low Gate Charge Qg results in Simple Drive Switch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward Converter Ruggedness Single Switch Forward Converter Reduced rDS(ON) ... See More ⇒

 8.2. Size:181K  fairchild semi
fdh15n50 fdp15n50.pdf pdf_icon

FDP15N40

August 2003 FDH15N50 / FDP15N50 / FDB15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET Applications Features Low Gate Charge Qg results in Simple Drive Switch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward Converter Ruggedness Single Switch Forward Converter Reduced rDS(ON) ... See More ⇒

 8.3. Size:490K  fairchild semi
fdp15n65 fdpf15n65.pdf pdf_icon

FDP15N40

April 2007 TM UniFET FDP15N65 / FDPF15N65 650V N-Channel MOSFET Features Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 48.5 nC) stripe, DMOS technology. Low Crss ( typical 23.6 pF) This advanced technology has been especia... See More ⇒

Detailed specifications: FDP12N50, FDP12N50NZ, FDP12N60NZ, STM4470A, FDP150N10, STM4470, FDP150N10AF102, STM4460, IRLZ44N, STM4446, FDP16AN08A0, FDP18N20F, STM4439A, FDP18N50, FDP19N40, STM4437A, FDP20N50

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