STM4446 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STM4446
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2.5 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 9 A
CARACTERÍSTICAS ELÉCTRICAS
Carga de la puerta (Qg): 7.3 nC
Conductancia de drenaje-sustrato (Cd): 124 pF
Resistencia entre drenaje y fuente RDS(on): 0.0165 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de MOSFET STM4446
STM4446 Datasheet (PDF)
stm4446.pdf
GreenProductSTM4446aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.16.5 @ VGS=10VSuface Mount Package.40V 9A26 @ VGS=4.5V D 5 4 G6 3D S7 2 SDSO-8D 8 1S1ABSOLUTE MAXIMUM RATINGS (TA=2
stm4432.pdf
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stm4460.pdf
STM4460aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.32 @ VGS=10VSuface Mount Package.40V 7A45 @ VGS=4.5VD 5 4 GD 6 3S7 2D SS O-88 1D S1(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGS
stm4470a.pdf
STM4470ASamHop Microelectronics Corp.May, 10 2007N-Channel Enhancement Mode Field Effect TransistorF E ATUR E SPRODUCT SUMMARYS uper high dense cell design for low R DS (ON).VDSS ID RDS(ON) ( m ) MaxR ugged and reliable.10.5 @ VGS = 10V40V 10AS urface Mount Package.13.5 @ VGS = 4.5VE S D Protected.SO-81ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise note
stm4410a.pdf
S T M4410AS amHop Microelectronics C orp. J an 04 2005 ver1.1 N-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E SS uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) Max R ugged and reliable.9.5 @ V G S = 10V30V 10AS urface Mount Package.21 @ V G S = 4.5VS O-81ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless other
stm4433a.pdf
S T M4433AS amHop Microelectronics C orp. J an.25 2005P-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E S5S uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) MaxR ugged and reliable.35 @ V G S = -10V-30V -6AS urface Mount Package.55 @ V G S = -4.5VD D D D8 7 6 5S O-811 2 3 4S S S GABS OLUTE MAXIMU
stm4472.pdf
GreenProductS TM4472S amHop Microelectronics C orp.Jan.7 ,2008 ver1.0N- Channel nhancement Mode Field Effect ransistorE TF E ATUR E SPR ODUC T S UMMAR YS uper high dense cell design for low R DS (ON).ID R DS (ON) ( m ) MaxVDS SR ugged and reliable.24 @ VG S = 10VS urface Mount Package.40V 7 A30 @ VG S = 4.5VE S D Protected.S O-81ABS OLUTE MAXIMUM R
stm4470e.pdf
STM4470ESamHop Microelectronics Corp.May. 15 2007 ver1.0N-Channel Enhancement Mode Field Effect TransistorF E ATUR E SPRODUCT SUMMARYS uper high dense cell design for low R DS (ON).VDSS ID RDS(ON) ( m ) MaxR ugged and reliable.12 @ VGS = 10V40V 9.5AS urface Mount Package.15 @ VGS = 4.5VE S D Protected.SO-81ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise
stm4435.pdf
GreenProductS TM4435S amHop Microelectronics C orp.J AN.20 2006P-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.20 @ VG S = -10V-30V -8AS urface Mount Package.33 @ VG S = -4.5VD D D D8 7 6 5S O-811 2 3 4S S S GABS OLUTE M
stm4470.pdf
GreenProductSTM4470SamHop Microelectronics Corp.Oct. 16. 2006 Ver1.1N-Channel Enhancement Mode Field Effect TransistorPRODUCT SUMMARY FEATURESdSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) ( m ) MaxRugged and reliable.10 @ VGS = 10V40V 10ASurface Mount Package.13 @ VGS = 4.5VSO-81ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)Para
stm4439a.pdf
S T M4439AS amHop Microelectronics C orp. Dec 15.2004P-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E S5S uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) MaxR ugged and reliable.10 @ V G S = -10V-30V -14AS urface Mount Package.18 @ V G S = -4.5VD D D D8 7 6 5S O-811 2 3 4S S S GABS OLUTE MAXIMU
stm4437a.pdf
STM4437AaS mHop Microelectronics C orp.Ver 1.1P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.15 @ VGS=-10VSuface Mount Package.-30V -10A26 @ VGS=-4.5VD 5 4 G6 3D S7 2D SS O-8D 8 1S1(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM R
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