STM4439A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STM4439A
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 980 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
Encapsulados: SOP8
Búsqueda de reemplazo de STM4439A MOSFET
- Selecciónⓘ de transistores por parámetros
STM4439A datasheet
stm4439a.pdf
S T M4439A S amHop Microelectronics C orp. Dec 15.2004 P-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y F E AT UR E S 5 S uper high dense cell design for low R DS (ON). V DS S ID R DS (ON) ( m W ) Max R ugged and reliable. 10 @ V G S = -10V -30V -14A S urface Mount Package. 18 @ V G S = -4.5V D D D D 8 7 6 5 S O-8 1 1 2 3 4 S S S G ABS OLUTE MAXIMU
stm4432.pdf
Gre r r P Pr P P STM4432 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 11 @ VGS=10V Suface Mount Package. 40V 12A 15 @ VGS=4.5V SO-8 1 (TA=25 C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Paramet
stm4433a.pdf
S T M4433A S amHop Microelectronics C orp. J an.25 2005 P-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y F E AT UR E S 5 S uper high dense cell design for low R DS (ON). V DS S ID R DS (ON) ( m W ) Max R ugged and reliable. 35 @ V G S = -10V -30V -6A S urface Mount Package. 55 @ V G S = -4.5V D D D D 8 7 6 5 S O-8 1 1 2 3 4 S S S G ABS OLUTE MAXIMU
stm4435.pdf
Green Product S TM4435 S amHop Microelectronics C orp. J AN.20 2006 P-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 20 @ VG S = -10V -30V -8A S urface Mount Package. 33 @ VG S = -4.5V D D D D 8 7 6 5 S O-8 1 1 2 3 4 S S S G ABS OLUTE M
Otros transistores... FDP150N10 , STM4470 , FDP150N10AF102 , STM4460 , FDP15N40 , STM4446 , FDP16AN08A0 , FDP18N20F , AO3400 , FDP18N50 , FDP19N40 , STM4437A , FDP20N50 , FDP20N50F , FDP22N50N , FDP24N40 , STM4435 .
History: DMT10H015LSS | DMTH6002LPS
History: DMT10H015LSS | DMTH6002LPS
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