S T M4439AS amHop Microelectronics C orp. Dec 15.2004P-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E S5S uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) MaxR ugged and reliable.10 @ V G S = -10V-30V -14AS urface Mount Package.18 @ V G S = -4.5VD D D D8 7 6 5S O-811 2 3 4S S S GABS OLUTE MAXIMU

GrerrPPrPPSTM4432aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m ) MaxVDSS IDRugged and reliable.11 @ VGS=10VSuface Mount Package.40V 12A15 @ VGS=4.5VSO-81(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSymbol Paramet

S T M4433AS amHop Microelectronics C orp. J an.25 2005P-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E S5S uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) MaxR ugged and reliable.35 @ V G S = -10V-30V -6AS urface Mount Package.55 @ V G S = -4.5VD D D D8 7 6 5S O-811 2 3 4S S S GABS OLUTE MAXIMU

GreenProductS TM4435S amHop Microelectronics C orp.J AN.20 2006P-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.20 @ VG S = -10V-30V -8AS urface Mount Package.33 @ VG S = -4.5VD D D D8 7 6 5S O-811 2 3 4S S S GABS OLUTE M

STM4437AaS mHop Microelectronics C orp.Ver 1.1P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.15 @ VGS=-10VSuface Mount Package.-30V -10A26 @ VGS=-4.5VD 5 4 G6 3D S7 2D SS O-8D 8 1S1(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM R