FDP20N50F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDP20N50F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm
Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET FDP20N50F

FDP20N50F Datasheet (PDF)

..1. Size:838K fairchild semi
fdp20n50f fdpf20n50ft.pdf

October 2007UniFETTMFDP20N50F / FDPF20N50FTtmN-Channel MOSFET, FRFET 500V, 20A, 0.26Features RDS(on) = 0.22 ( Typ.)@ VGS = 10V, ID = 10ADescription Low gate charge ( Typ. 50nC)These N-Channel enhancement mode power field effect transis- Low Crss ( Typ. 27pF)tors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Fast reve

..2. Size:494K onsemi
fdp20n50f fdpf20n50ft.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

6.1. Size:469K fairchild semi
fdp20n50 fdpf20n50.pdf

April 2007TMUniFETFDP20N50 / FDPF20N50500V N-Channel MOSFETFeatures Description 20A, 500V, RDS(on) = 0.23 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 45.6 nC)stripe, DMOS technology. Low Crss ( typical 27 pF)This advanced technology has been especially

6.2. Size:665K fairchild semi
fdp20n50 fdpf20n50 fdpf20n50t.pdf

November 2013FDP20N50 / FDPF20N50 / FDPF20N50TN-Channel UniFETTM MOSFET500 V, 20 A, 230 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 200 m (Typ.) @ VGS = 10 V, ID = 10 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 45.6 nC)This MOSFET is tailored to reduce on-state resistance, and to

6.3. Size:772K onsemi
fdp20n50 fdpf20n50 fdpf20n50t.pdf

6.4. Size:232K inchange semiconductor
fdp20n50.pdf

isc N-Channel MOSFET Transistor FDP20N50DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS These devices are well suited for high efficient switchedmode power supplies and active power factor correction.ABSOLUTE MAXI

Otros transistores... STM4446 , FDP16AN08A0 , FDP18N20F , STM4439A , FDP18N50 , FDP19N40 , STM4437A , FDP20N50 , IRF630 , FDP22N50N , FDP24N40 , STM4435 , FDP2532 , FDP2552 , FDP2572 , FDP2614 , STM4433A .

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