Справочник MOSFET. FDP20N50F

 

FDP20N50F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FDP20N50F

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 250 W

Предельно допустимое напряжение сток-исток (Uds): 500 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Пороговое напряжение включения Ugs(th): 5 V

Максимально допустимый постоянный ток стока (Id): 20 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 50 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.26 Ohm

Тип корпуса: TO220

Аналог (замена) для FDP20N50F

 

 

FDP20N50F Datasheet (PDF)

1.1. fdp20n50f fdpf20n50ft.pdf Size:838K _fairchild_semi

FDP20N50F
FDP20N50F

October 2007 UniFETTM FDP20N50F / FDPF20N50FT tm N-Channel MOSFET, FRFET 500V, 20A, 0.26? Features RDS(on) = 0.22? ( Typ.)@ VGS = 10V, ID = 10A Description Low gate charge ( Typ. 50nC) These N-Channel enhancement mode power field effect transis- Low Crss ( Typ. 27pF) tors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Fast reverse recovery swit

2.1. fdp20n50 fdpf20n50.pdf Size:469K _fairchild_semi

FDP20N50F
FDP20N50F

April 2007 TM UniFET FDP20N50 / FDPF20N50 500V N-Channel MOSFET Features Description 20A, 500V, RDS(on) = 0.23? @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 45.6 nC) stripe, DMOS technology. Low Crss ( typical 27 pF) This advanced technology has been especially tailored to

2.2. fdp20n50 fdpf20n50 fdpf20n50t.pdf Size:665K _fairchild_semi

FDP20N50F
FDP20N50F

November 2013 FDP20N50 / FDPF20N50 / FDPF20N50T N-Channel UniFETTM MOSFET 500 V, 20 A, 230 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage • RDS(on) = 200 mΩ (Typ.) @ VGS = 10 V, ID = 10 A MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 45.6 nC) This MOSFET is tailored to reduce on-state resistance, and to •

 2.3. fdp20n50.pdf Size:232K _inchange_semiconductor

FDP20N50F
FDP20N50F

isc N-Channel MOSFET Transistor FDP20N50 DESCRIPTION ·Drain Current I =20A@ T =25℃ D C ·Drain Source Voltage- : V =500V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · These devices are well suited for high efficient switched mode power supplies and active power factor correction. ABSOLUTE MAXI

Другие MOSFET... STM4446 , FDP16AN08A0 , FDP18N20F , STM4439A , FDP18N50 , FDP19N40 , STM4437A , FDP20N50 , IRFP450 , FDP22N50N , FDP24N40 , STM4435 , FDP2532 , FDP2552 , FDP2572 , FDP2614 , STM4433A .

 

 
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