Аналоги JMTG062N04D. Основные параметры
Наименование производителя: JMTG062N04D
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 37
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 55
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 32
ns
Cossⓘ - Выходная емкость: 213
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0082
Ohm
Тип корпуса: PDFN5X6-8L-D
Аналог (замена) для JMTG062N04D
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подбор ⓘ MOSFET транзистора по параметрам
JMTG062N04D даташит
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jmtg062n04d.pdf 
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jmtg016n04a.pdf 
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jmtg080n04d.pdf 
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jmtg080p03a.pdf 
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jmtg021n04a.pdf 
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jmtg030p02a.pdf 
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jmtg018n03a.pdf 
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9.11. Size:1121K jiejie micro
jmtg035n04l.pdf 
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jmtg027n04a.pdf 
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jmtg055n04a.pdf 
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9.14. Size:1182K jiejie micro
jmtg035n04a.pdf 
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9.15. Size:515K jiejie micro
jmtg040n03a.pdf 
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History: JMTG28DN10D
| JMTG100N04A
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