JMTG062N04D
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JMTG062N04D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 37
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 40
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 55
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 32
nS
Cossⓘ - Capacitancia
de salida: 213
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0082
Ohm
Paquete / Cubierta: PDFN5X6-8L-D
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JMTG062N04D
Datasheet (PDF)
..1. Size:727K jiejie micro
jmtg062n04d.pdf 
JMTG062N04DDescriptionJMT Dual N-channel Enhancement Mode Power MOSFETFeaturesApplications 40V, 55A Load SwitchRDS(ON)
8.1. Size:404K jiejie micro
jmtg060n06a.pdf
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jmtg060p03a.pdf
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jmtg040n03a.pdf
JMTG040N03A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 30V, 80A Load Switch R
9.2. Size:1425K jiejie micro
jmtg050p03a.pdf
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jmtg016n04a.pdf
JMTG016N04ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Application 40V, 210A Load SwitchR
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jmtg080n04d.pdf
JMTG080N04DDescriptionJMT Dual N-channel Enhancement Mode Power MOSFETFeatures Applications 40V, 45A Load SwitchRDS(ON)
9.5. Size:1592K jiejie micro
jmtg075c03d.pdf
30V, 38A&-25A, 9.3m&27.7m N And P-channel Power Trench MOSFETJMTG075C03DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters N P Unit 100% UIS TestedVDSS 30 -30 V 100% Vds TestedVGS(th)_Typ 1.6 -1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 38 -25 ARDS(ON)_Typ(@VGS=10V 6.7 19.8 mWRDS(ON)_Typ(@VGS=4.5V 9.3 27.7Applications mW
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jmtg080p03a.pdf
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jmtg070n06a.pdf
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jmtg021n04a.pdf
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jmtg030p02a.pdf
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9.10. Size:1070K jiejie micro
jmtg018n03a.pdf
30V, 130A, 2m N-channel Power Trench MOSFETJMTG018N03AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 130 ARDS(ON)_Typ(@VGS=10V 1.5 mWApplicationsRDS(ON)_Typ(@VGS=4.5V 2.0 mW Load Switch PWM Application P
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jmtg035n04l.pdf
40V, 100A, 3m N-channel Power Trench MOSFETJMTG035N04LProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 100 ARDS(ON)_Typ(@VGS=10V 2.4 mW Pb-free platingRDS(ON)_Typ(@VGS=4.5V 3.0 mWApplications Load Switch P
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jmtg027n04a.pdf
40V, 190A, 1.8m N-channel Power Trench MOSFETJMTG027N04AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 190 ARDS(ON)_Typ(@VGS=10V 1.8 mWApplicationsRDS(ON)_Typ(@VGS=8V 2.1 mW Load Switch PWM Application P
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jmtg055n04a.pdf
JMTG055N04ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeaturesApplications 40V, 75A Load SwitchRDS(ON)
9.14. Size:1182K jiejie micro
jmtg035n04a.pdf
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9.15. Size:515K jiejie micro
jmtg040n03a.pdf
JMTG040N03ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeaturesApplications 30V, 80A Load SwitchRDS(ON)
Otros transistores... JMSL1006PG
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