Справочник MOSFET. FDP16AN08A0

 

FDP16AN08A0 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDP16AN08A0
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 135 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 58 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
   Тип корпуса: TO220
     - подбор MOSFET транзистора по параметрам

 

FDP16AN08A0 Datasheet (PDF)

 ..1. Size:267K  fairchild semi
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FDP16AN08A0

July 2002FDP16AN08A0 / FDB16AN08A0N-Channel PowerTrench MOSFET75V, 58A, 16mFeatures Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 58A 42V Automotive Load Control Qg(tot) = 28nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capab

 ..2. Size:627K  onsemi
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FDP16AN08A0

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:284K  inchange semiconductor
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FDP16AN08A0

isc N-Channel MOSFET Transistor FDP16AN08A0FEATURESWith TO-220 packagingDrain Source Voltage-: V 75VDSSStatic drain-source on-resistance:RDS(on) 16m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:241K  fairchild semi
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FDP16AN08A0

October 2009UniFETTMFDP16N50U / FDPF16N50UTtmN-Channel MOSFET, FRFET500V, 15A, 0.48Features Description RDS(on) = 0.37 ( Typ.)@ VGS = 10V, ID = 7.5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 32nC)DMOS technology. Low Crss ( Typ. 20pF)This advance tech

Другие MOSFET... FDP12N60NZ , STM4470A , FDP150N10 , STM4470 , FDP150N10AF102 , STM4460 , FDP15N40 , STM4446 , 10N60 , FDP18N20F , STM4439A , FDP18N50 , FDP19N40 , STM4437A , FDP20N50 , FDP20N50F , FDP22N50N .

History: TK3A60DA | BSS214NW | APL602J

 

 
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